S. Meijs, M. McDonald, S. Sørensen, K. Rechendorff, V. Petrak, M. Nesladek, N. Rijkhoff, C. Pennisi
{"title":"掺杂硼纳米晶金刚石膜提高氮化钛电极的电荷存储能力","authors":"S. Meijs, M. McDonald, S. Sørensen, K. Rechendorff, V. Petrak, M. Nesladek, N. Rijkhoff, C. Pennisi","doi":"10.5220/0005606401060109","DOIUrl":null,"url":null,"abstract":"The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.","PeriodicalId":167011,"journal":{"name":"International Congress on Neurotechnology, Electronics and Informatics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Increased Charge Storage Capacity of Titanium Nitride Electrodes by Deposition of Boron-doped Nanocrystalline Diamond Films\",\"authors\":\"S. Meijs, M. McDonald, S. Sørensen, K. Rechendorff, V. Petrak, M. Nesladek, N. Rijkhoff, C. Pennisi\",\"doi\":\"10.5220/0005606401060109\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.\",\"PeriodicalId\":167011,\"journal\":{\"name\":\"International Congress on Neurotechnology, Electronics and Informatics\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Congress on Neurotechnology, Electronics and Informatics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5220/0005606401060109\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Congress on Neurotechnology, Electronics and Informatics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5220/0005606401060109","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Increased Charge Storage Capacity of Titanium Nitride Electrodes by Deposition of Boron-doped Nanocrystalline Diamond Films
The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.