掺杂硼纳米晶金刚石膜提高氮化钛电极的电荷存储能力

S. Meijs, M. McDonald, S. Sørensen, K. Rechendorff, V. Petrak, M. Nesladek, N. Rijkhoff, C. Pennisi
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引用次数: 7

摘要

本研究的目的是探讨在氮化钛(TiN)涂层电极上沉积薄层硼掺杂纳米晶金刚石(B-NCD)的可行性及其对电荷注入性能的影响。由于B-NCD具有较宽的电势窗,因此采用B-NCD薄膜可以提高电荷存储容量。与TiN相比,B-NCD的阻抗值更高,脉冲电容更低。然而,由于较宽的电位窗口,B-NCD涂层可以在不达到不安全电位的情况下注入更多的电荷。TiN和B-NCD的生产参数至关重要,因为它们会影响孔隙阻力,从而影响可用于脉冲的表面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Increased Charge Storage Capacity of Titanium Nitride Electrodes by Deposition of Boron-doped Nanocrystalline Diamond Films
The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.
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