纳米硅技术中大功率多端口0.46太赫兹辐射源,利用晶体管的基频振荡超过fMAX

Peyman Nazari, Z. Wang, P. Heydari
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引用次数: 0

摘要

介绍了一种硅集成垂直IMPATT (V-IMPATT)二极管,并介绍了其在硅锗(SiGe) BiCMOS工艺中的实现。该器件在> 400GHz时表现出有源行为和负电阻,远高于该技术节点中晶体管的fMAX。此外,与基于晶体管的谐波发电相比,它提供了更高的输出功率,这是因为它在击穿区域运行,与晶体管相比,允许电压摆幅更大。因此,使用该装置,可以在纳米级硅工艺中产生高振荡功率。此外,四端口片上腔背天线结构作为多端口谐振器、功率合成器和天线与四个V-IMPATT器件垂直集成,构建硅集成的0.46THz辐射源,总辐射功率为10.5dBm, EIRP为18.5dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A high-power multi-port 0.46THz radiation source in nano-scale silicon technology using fundamental-frequency oscillation beyond fMAX of transistors
A silicon-integrated vertical IMPATT (V-IMPATT) diode is introduced and its implementation in a silicon-germanium (SiGe) BiCMOS process is presented. The device exhibits active behavior and negative resistance at > 400GHz, far above the fMAX of transistors in that technology node. Furthermore, it provides much higher output power compared to transistor-based harmonic power generation thanks to operation in breakdown region with much larger allowable voltage swing compared to transistors. As a result, using this device, generation of high oscillation power is enabled in nano-scale silicon process. In addition, a four-port on-chip cavity-backed antenna structure, as a multi-port resonator,power-combiner, and antenna is vertically integrated with four V-IMPATT devices to build a silicon-integrated 0.46THz radiation source, demonstrating 10.5dBm total radiated power and 18.5dBm EIRP.
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