{"title":"纳米硅技术中大功率多端口0.46太赫兹辐射源,利用晶体管的基频振荡超过fMAX","authors":"Peyman Nazari, Z. Wang, P. Heydari","doi":"10.1145/3109453.3122843","DOIUrl":null,"url":null,"abstract":"A silicon-integrated vertical IMPATT (V-IMPATT) diode is introduced and its implementation in a silicon-germanium (SiGe) BiCMOS process is presented. The device exhibits active behavior and negative resistance at > 400GHz, far above the fMAX of transistors in that technology node. Furthermore, it provides much higher output power compared to transistor-based harmonic power generation thanks to operation in breakdown region with much larger allowable voltage swing compared to transistors. As a result, using this device, generation of high oscillation power is enabled in nano-scale silicon process. In addition, a four-port on-chip cavity-backed antenna structure, as a multi-port resonator,power-combiner, and antenna is vertically integrated with four V-IMPATT devices to build a silicon-integrated 0.46THz radiation source, demonstrating 10.5dBm total radiated power and 18.5dBm EIRP.","PeriodicalId":400141,"journal":{"name":"Proceedings of the 4th ACM International Conference on Nanoscale Computing and Communication","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A high-power multi-port 0.46THz radiation source in nano-scale silicon technology using fundamental-frequency oscillation beyond fMAX of transistors\",\"authors\":\"Peyman Nazari, Z. Wang, P. Heydari\",\"doi\":\"10.1145/3109453.3122843\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A silicon-integrated vertical IMPATT (V-IMPATT) diode is introduced and its implementation in a silicon-germanium (SiGe) BiCMOS process is presented. The device exhibits active behavior and negative resistance at > 400GHz, far above the fMAX of transistors in that technology node. Furthermore, it provides much higher output power compared to transistor-based harmonic power generation thanks to operation in breakdown region with much larger allowable voltage swing compared to transistors. As a result, using this device, generation of high oscillation power is enabled in nano-scale silicon process. In addition, a four-port on-chip cavity-backed antenna structure, as a multi-port resonator,power-combiner, and antenna is vertically integrated with four V-IMPATT devices to build a silicon-integrated 0.46THz radiation source, demonstrating 10.5dBm total radiated power and 18.5dBm EIRP.\",\"PeriodicalId\":400141,\"journal\":{\"name\":\"Proceedings of the 4th ACM International Conference on Nanoscale Computing and Communication\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 4th ACM International Conference on Nanoscale Computing and Communication\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/3109453.3122843\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 4th ACM International Conference on Nanoscale Computing and Communication","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/3109453.3122843","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-power multi-port 0.46THz radiation source in nano-scale silicon technology using fundamental-frequency oscillation beyond fMAX of transistors
A silicon-integrated vertical IMPATT (V-IMPATT) diode is introduced and its implementation in a silicon-germanium (SiGe) BiCMOS process is presented. The device exhibits active behavior and negative resistance at > 400GHz, far above the fMAX of transistors in that technology node. Furthermore, it provides much higher output power compared to transistor-based harmonic power generation thanks to operation in breakdown region with much larger allowable voltage swing compared to transistors. As a result, using this device, generation of high oscillation power is enabled in nano-scale silicon process. In addition, a four-port on-chip cavity-backed antenna structure, as a multi-port resonator,power-combiner, and antenna is vertically integrated with four V-IMPATT devices to build a silicon-integrated 0.46THz radiation source, demonstrating 10.5dBm total radiated power and 18.5dBm EIRP.