基于特性电流的低功耗CMOS器件设计新方法的性能提升

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346995

E. Yoshida, Y. Momiyama, M. Miyamoto, T. Saiki, M. Kojima, S. Satoh, T. Sugii

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引用次数: 14

摘要

作者提出了一种特征电流(I_chr)来取代传统的饱和驱动电流，用于估计深度缩放器件的CMOS逆变器延迟时间。作者还提出了一种新的基于I_chr的器件设计方法，以实现CMOS逆变电路更高的工作频率。新方法将传输延迟时间(Tpd)缩短了15%

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Performance Boost using a New Device Design Methodology Based on Characteristic Current for Low-Power CMOS

The authors proposes a characteristic current (I_chr) to replace the conventional saturation drive current used to estimate approximate CMOS inverter delay times for deeply scaled devices. The authors also present a new device design method based on I_chr to achieve a higher operation frequency for CMOS inverter circuits. The new method shortens propagation delay time (Tpd) by 15%

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2006 International Electron Devices Meeting

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