采用耐温生产技术构建的基准电压源的高温运行预测(高达+300°C)

2018 IEEE East-West Design & Test Symposium (EWDTS) Pub Date : 2018-09-01 DOI:10.1109/EWDTS.2018.8524827

L. Sambursky, Dmitry A. Parfenov, M. Ismail-Zade, Alexander S. Boldov, Borislav S. Dubyaga

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引用次数: 0

摘要

在这项工作中，对亚微米SOI CMOS参考电压源集成电路在高达+ 300°C的高温下进行了虚拟测试。根据仿真结果估计了其耐温性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Prediction of High-Temperature Operation (up to +300°C) of Reference Voltage Source Built with Temperature-Tolerant Production Technology

In this work, virtual testing of submicron SOI CMOS reference voltage source integrated circuit was conducted with regard to elevated temperature in the range up to + 300°C. Based on simulation results its temperature tolerance figures were estimated.

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2018 IEEE East-West Design & Test Symposium (EWDTS)

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