197 fmt压控振荡器，34%调谐范围，适用于45nm SOI技术的5G应用

2022 IEEE Radio and Wireless Symposium (RWS) Pub Date : 2022-01-16 DOI:10.1109/RWS53089.2022.9719977

Yahia Z. M. Ibrahim, M. Abdalla, A. Mohieldin

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引用次数: 0

摘要

本文介绍了一种用于5G通信系统的宽调谐范围(7.3 - 10.3 GHz) VCO的设计，采用45nm SOI技术。在载波频率偏移1 MHz时，VCO的相位噪声测量值为-119.2 dBc/Hz，并实现了197的非常高的fmt。拟议的VCO在0.9V电源下运行时消耗15mW。本文提出了新的晶体管尺寸设计方法以及降低压控振荡器相位噪声的偏置方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 197 FoMT VCO with 34% Tuning Range for 5G Applications in 45nm SOI Technology

This paper presents the design of a wide tuning range (7.3 - 10.3 GHz) VCO, in 45nm SOI technology, for 5G communication systems. The VCO exhibits a measured phase noise of -119.2 dBc/Hz at 1 MHz offset from the carrier frequency and achieves a very high FOMT of 197. The proposed VCO consumes 15mW while operating from a 0.9V power supply. This paper presents new design methodology for transistor sizing as well as biasing to reduce VCO phase noise.

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2022 IEEE Radio and Wireless Symposium (RWS)

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