利用精确的基极电阻模型提取双极晶体管的基极和发射极电阻

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI:10.1109/ICMTS.2002.1193174

F. Ingvarson, M. Linder, K. Jeppson

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引用次数: 6

摘要

提出了一种直接提取基极和发射极电阻的方法。该方法具有以下特点:1)只需要对一个晶体管进行标准的正向Gummel测量;2)通过使用精确的基极电阻模型来考虑基极中的电流拥挤和电导率调制;3)使用非线性优化步骤提取电阻参数。此外，还提出了一种改进的集电极电流模型的高注入参数提取技术。

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Extraction of the base and emitter resistances in bipolar transistors using an accurate base resistance model

A straightforward method for extracting the base and emitter resistances is presented. The method has the following properties: 1) only a standard forward Gummel measurement on one transistor is required, 2) current-crowding and conductivity-modulation in the base are accounted for through the use of an accurate base resistance model, and 3) the resistance parameters are extracted using a non-linear optimization step. Furthermore, a technique for extraction of the high-injection parameters of a modified collector current model is also presented.

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来源期刊

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.

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