Hyeon-Bhin Jo, Seung-Won Yun, Jun-Gyu Kim, D. Yun, I. Lee, Daehyun Kim, Tae-Woo Kim, Sang-Kuk Kim, J. Yun, T.E. Kim, T. Tsutsumi, H. Sugiyama, H. Matsuzaki
{"title":"在0.8 ga0.2 as复合通道hemt中，Lg = 19 nm, fT = 738 GHz, fmax = 492 GHz","authors":"Hyeon-Bhin Jo, Seung-Won Yun, Jun-Gyu Kim, D. Yun, I. Lee, Daehyun Kim, Tae-Woo Kim, Sang-Kuk Kim, J. Yun, T.E. Kim, T. Tsutsumi, H. Sugiyama, H. Matsuzaki","doi":"10.1109/IEDM13553.2020.9372070","DOIUrl":null,"url":null,"abstract":"We present L<inf>g</inf> = 19 nm In<inf>0.8</inf>Ga<inf>0.2</inf>As composite-channel high-electron mobility transistors (HEMTs) with outstanding DC and high-frequency characteristics. We adopted a composite-channel design with an In<inf>0.8</inf>Ga<inf>0.2</inf>As core layer that led to superior carrier transport properties. The device with L<inf>g</inf> = 19 nm displayed an excellent combination of R<inf>ON</inf> = 271 Ω-μm, g<inf>m_max</inf> = 2.5 mS/μm and f<inf>T</inf>/f<inf>max</inf> = 738/492 GHz. To understand the physical origin of such an excellent combination of DC and RF responses, we analyzed the effective mobility (μ<inf>n_eff</inf>) and delay time for both long- and short-L<inf>g</inf> devices, revealing a very high μ<inf>n_eff</inf> value of 13,200 cm<sup>2</sup>/V•s and an average velocity under the gate (v<inf>avg</inf>) of 6.2 × 10<sup>7</sup> cm/s. We also studied the impact of the gate-to-source spacing (L<inf>GS</inf>) and the electrostatic integrity of the device, finding that a reduction of L<inf>GS</inf> less than 0.6 μm was of little use in improving g<inf>m_max</inf> and f<inf>T</inf>. Additionally, the intrinsic output conductance (g<inf>o_int</inf>) had an important impact on f<inf>T</inf> in short-L<inf>g</inf> HEMTs.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Lg = 19 nm In0.8Ga0.2As composite-channel HEMTs with fT = 738 GHz and fmax = 492 GHz\",\"authors\":\"Hyeon-Bhin Jo, Seung-Won Yun, Jun-Gyu Kim, D. Yun, I. Lee, Daehyun Kim, Tae-Woo Kim, Sang-Kuk Kim, J. Yun, T.E. Kim, T. Tsutsumi, H. Sugiyama, H. Matsuzaki\",\"doi\":\"10.1109/IEDM13553.2020.9372070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present L<inf>g</inf> = 19 nm In<inf>0.8</inf>Ga<inf>0.2</inf>As composite-channel high-electron mobility transistors (HEMTs) with outstanding DC and high-frequency characteristics. We adopted a composite-channel design with an In<inf>0.8</inf>Ga<inf>0.2</inf>As core layer that led to superior carrier transport properties. The device with L<inf>g</inf> = 19 nm displayed an excellent combination of R<inf>ON</inf> = 271 Ω-μm, g<inf>m_max</inf> = 2.5 mS/μm and f<inf>T</inf>/f<inf>max</inf> = 738/492 GHz. To understand the physical origin of such an excellent combination of DC and RF responses, we analyzed the effective mobility (μ<inf>n_eff</inf>) and delay time for both long- and short-L<inf>g</inf> devices, revealing a very high μ<inf>n_eff</inf> value of 13,200 cm<sup>2</sup>/V•s and an average velocity under the gate (v<inf>avg</inf>) of 6.2 × 10<sup>7</sup> cm/s. We also studied the impact of the gate-to-source spacing (L<inf>GS</inf>) and the electrostatic integrity of the device, finding that a reduction of L<inf>GS</inf> less than 0.6 μm was of little use in improving g<inf>m_max</inf> and f<inf>T</inf>. Additionally, the intrinsic output conductance (g<inf>o_int</inf>) had an important impact on f<inf>T</inf> in short-L<inf>g</inf> HEMTs.\",\"PeriodicalId\":415186,\"journal\":{\"name\":\"2020 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM13553.2020.9372070\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9372070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Lg = 19 nm In0.8Ga0.2As composite-channel HEMTs with fT = 738 GHz and fmax = 492 GHz
We present Lg = 19 nm In0.8Ga0.2As composite-channel high-electron mobility transistors (HEMTs) with outstanding DC and high-frequency characteristics. We adopted a composite-channel design with an In0.8Ga0.2As core layer that led to superior carrier transport properties. The device with Lg = 19 nm displayed an excellent combination of RON = 271 Ω-μm, gm_max = 2.5 mS/μm and fT/fmax = 738/492 GHz. To understand the physical origin of such an excellent combination of DC and RF responses, we analyzed the effective mobility (μn_eff) and delay time for both long- and short-Lg devices, revealing a very high μn_eff value of 13,200 cm2/V•s and an average velocity under the gate (vavg) of 6.2 × 107 cm/s. We also studied the impact of the gate-to-source spacing (LGS) and the electrostatic integrity of the device, finding that a reduction of LGS less than 0.6 μm was of little use in improving gm_max and fT. Additionally, the intrinsic output conductance (go_int) had an important impact on fT in short-Lg HEMTs.
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