生长CVD石墨烯上沉积h2o基Al2O3的研究

2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale Pub Date : 2013-08-01 DOI:10.1109/3M-NANO.2013.6737390

Wenrong Wang, C. Liang, Tie Li, Yuelin Wang

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引用次数: 0

摘要

本文采用化学气相沉积法制备了石墨烯薄膜。拉曼光谱和透射电子显微镜显示石墨烯薄膜层数少。采用氢氧基原子层沉积法将Al2O3薄膜直接生长在SiO2/Si上的石墨烯表面。实验表明，物理吸附的H2O分子在石墨烯表面的分布决定了Al2O3膜的形态，O/Al比接近1.5的化学计量条件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Studies on H2O-based Al2O3 deposited on as-grown CVD graphene

In this paper, graphene films were synthesized by chemical vapor deposition. Raman spectra and transmission electron microscope indicated the graphene films were few-layer. Al₂O₃ films were grown directly onto the surface of graphene transferred on SiO₂/Si by H₂O-based atomic layer deposition method. Experiments revealed that the distribution of physically adsorbed H₂O molecules on the surface of graphene decided the morphology of Al₂O₃ film, and the O/Al ratio was close to stoichiometric condition of 1.5.

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2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale

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