通过Sram阵列结构优化提高Sram的能效

A. Manikandan
{"title":"通过Sram阵列结构优化提高Sram的能效","authors":"A. Manikandan","doi":"10.55529/jecnam.22.29.39","DOIUrl":null,"url":null,"abstract":"Reliability is a major concern in the microprocessor industry. In terms of power consumption, SRAM plays a key role in improving processing performance. Improving SRAM efficiency requires changes to the array structure. A general method in which the SRAM array has more rows than columns.The above techniques are proposed to improve efficiency by 10% for 8kbit and 40% for 64kbit at the same SRAM byte density and supply voltage. Implement suggested deep submicron technology for better reliability. Many proposed designs focus on low power consumption, often with reduced response times.As the technology scales, the power consumption of on-chain system devices with gate leakage, subthreshold current, and tunneling increases significantly. Small SRAM capabilities are important.This task demonstrates the potential of using larger SRAM array structures to achieve better SRAM energy efficiency, especially when the number of rows is less than the number of low-power columns. Compared to traditional 8T SRAM, the proposed 10T cell uses less power, has a different temperature and better performance.","PeriodicalId":420122,"journal":{"name":"Journal of Electronics,Computer Networking and Applied Mathematics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancing Energy Efficiency of Sram through Optimization of Sram Array Structures\",\"authors\":\"A. Manikandan\",\"doi\":\"10.55529/jecnam.22.29.39\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Reliability is a major concern in the microprocessor industry. In terms of power consumption, SRAM plays a key role in improving processing performance. Improving SRAM efficiency requires changes to the array structure. A general method in which the SRAM array has more rows than columns.The above techniques are proposed to improve efficiency by 10% for 8kbit and 40% for 64kbit at the same SRAM byte density and supply voltage. Implement suggested deep submicron technology for better reliability. Many proposed designs focus on low power consumption, often with reduced response times.As the technology scales, the power consumption of on-chain system devices with gate leakage, subthreshold current, and tunneling increases significantly. Small SRAM capabilities are important.This task demonstrates the potential of using larger SRAM array structures to achieve better SRAM energy efficiency, especially when the number of rows is less than the number of low-power columns. Compared to traditional 8T SRAM, the proposed 10T cell uses less power, has a different temperature and better performance.\",\"PeriodicalId\":420122,\"journal\":{\"name\":\"Journal of Electronics,Computer Networking and Applied Mathematics\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electronics,Computer Networking and Applied Mathematics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.55529/jecnam.22.29.39\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronics,Computer Networking and Applied Mathematics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.55529/jecnam.22.29.39","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

可靠性是微处理器行业关注的主要问题。在功耗方面,SRAM在提高处理性能方面起着关键作用。提高SRAM效率需要改变阵列结构。一种通用方法,其中SRAM数组的行多于列。在相同的SRAM字节密度和电源电压下,上述技术可将8kbit的效率提高10%,64kbit的效率提高40%。采用建议的深亚微米技术,提高可靠性。许多提出的设计关注于低功耗,通常减少响应时间。随着技术规模的扩大,具有栅漏、亚阈值电流和隧道效应的链上系统器件的功耗显著增加。小型SRAM功能非常重要。这项任务展示了使用更大的SRAM阵列结构来实现更好的SRAM能效的潜力,特别是当行数少于低功率列的数量时。与传统的8T SRAM相比,所提出的10T电池功耗更低,具有不同的温度和更好的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhancing Energy Efficiency of Sram through Optimization of Sram Array Structures
Reliability is a major concern in the microprocessor industry. In terms of power consumption, SRAM plays a key role in improving processing performance. Improving SRAM efficiency requires changes to the array structure. A general method in which the SRAM array has more rows than columns.The above techniques are proposed to improve efficiency by 10% for 8kbit and 40% for 64kbit at the same SRAM byte density and supply voltage. Implement suggested deep submicron technology for better reliability. Many proposed designs focus on low power consumption, often with reduced response times.As the technology scales, the power consumption of on-chain system devices with gate leakage, subthreshold current, and tunneling increases significantly. Small SRAM capabilities are important.This task demonstrates the potential of using larger SRAM array structures to achieve better SRAM energy efficiency, especially when the number of rows is less than the number of low-power columns. Compared to traditional 8T SRAM, the proposed 10T cell uses less power, has a different temperature and better performance.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信