H. Kudo, M. Akazawa, Shouhei Yamada, Masaya Tanaka, Haruo Iida, Jyunya Suzuki, T. Takano, S. Kuramochi
{"title":"用于异质芯片集成的高速、高密度、高性价比的充铜玻璃通孔通道","authors":"H. Kudo, M. Akazawa, Shouhei Yamada, Masaya Tanaka, Haruo Iida, Jyunya Suzuki, T. Takano, S. Kuramochi","doi":"10.23919/ICEP.2019.8733458","DOIUrl":null,"url":null,"abstract":"A topside Cu-filled through-glass via (\"Cu bridge\") is presented as a novel transmission channel. The simulated signal transmission loss of the Cu bridge was as low as í0.04 dB at a signal frequency of 18 GHz, corresponding to the PCI Express 5.0 bus standard. Its signal transmission loss was less than 0.13 % in a typical long-reach SerDes channel with a loss of í30 dB. The minimum pitch of the Cu bridge was as narrow as 100 μm, which meets the requirements for increased signal I/O. The simple few-step fabrication of the Cu bridge effectively reduces the cost of manufacturing glass interposers. This is a great advantage compared to silicon interposers, which require a complicated process to fabricate Cu through-silicon vias. A glass substrate embedded with Cu bridges supports semi-additive and damascene-based redistribution layers, which increases the number of potential packaging configurations. This Cu bridge is thus a promising approach to next-generation heterogeneous integration based on 2.nD interposers.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-speed High-density Cost-effective Cu-filled Through-Glass-Via Channel for Heterogeneous Chip Integration\",\"authors\":\"H. Kudo, M. Akazawa, Shouhei Yamada, Masaya Tanaka, Haruo Iida, Jyunya Suzuki, T. Takano, S. Kuramochi\",\"doi\":\"10.23919/ICEP.2019.8733458\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A topside Cu-filled through-glass via (\\\"Cu bridge\\\") is presented as a novel transmission channel. The simulated signal transmission loss of the Cu bridge was as low as í0.04 dB at a signal frequency of 18 GHz, corresponding to the PCI Express 5.0 bus standard. Its signal transmission loss was less than 0.13 % in a typical long-reach SerDes channel with a loss of í30 dB. The minimum pitch of the Cu bridge was as narrow as 100 μm, which meets the requirements for increased signal I/O. The simple few-step fabrication of the Cu bridge effectively reduces the cost of manufacturing glass interposers. This is a great advantage compared to silicon interposers, which require a complicated process to fabricate Cu through-silicon vias. A glass substrate embedded with Cu bridges supports semi-additive and damascene-based redistribution layers, which increases the number of potential packaging configurations. This Cu bridge is thus a promising approach to next-generation heterogeneous integration based on 2.nD interposers.\",\"PeriodicalId\":213025,\"journal\":{\"name\":\"2019 International Conference on Electronics Packaging (ICEP)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Electronics Packaging (ICEP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ICEP.2019.8733458\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ICEP.2019.8733458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-speed High-density Cost-effective Cu-filled Through-Glass-Via Channel for Heterogeneous Chip Integration
A topside Cu-filled through-glass via ("Cu bridge") is presented as a novel transmission channel. The simulated signal transmission loss of the Cu bridge was as low as í0.04 dB at a signal frequency of 18 GHz, corresponding to the PCI Express 5.0 bus standard. Its signal transmission loss was less than 0.13 % in a typical long-reach SerDes channel with a loss of í30 dB. The minimum pitch of the Cu bridge was as narrow as 100 μm, which meets the requirements for increased signal I/O. The simple few-step fabrication of the Cu bridge effectively reduces the cost of manufacturing glass interposers. This is a great advantage compared to silicon interposers, which require a complicated process to fabricate Cu through-silicon vias. A glass substrate embedded with Cu bridges supports semi-additive and damascene-based redistribution layers, which increases the number of potential packaging configurations. This Cu bridge is thus a promising approach to next-generation heterogeneous integration based on 2.nD interposers.