基于0.1 μm GaAs pHEMT技术的q波段自偏置LNA

2019 12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT) Pub Date : 2019-08-01 DOI:10.1109/UCMMT47867.2019.9008317

Zuojun Wang, Debin Hou, Jixin Chen, Zhe Chen, P. Yan, Li Zhang, W. Hong

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引用次数: 7

摘要

介绍了一种采用0.1 μm砷化镓(GaAs)伪晶高电子迁移率晶体管(pHEMT)技术的宽带q波段低噪声放大器(LNA)。LNA采用4级自偏置共源(CS)拓扑结构实现。测量放大器的峰值功率增益为28 dB, 3db带宽为15 GHz，中心为43 GHz。该放大器的输出1db增益压缩点为9.6 dBm。在3db带宽范围内，片上测量的噪声值保持在2.8 dB以下。在此基础上设计并制作了LNA模块。据作者所知，LNA在使用相同技术的其他宽带q波段LNA中显示出最低的噪声系数之一。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Q-Band Self-Biased LNA in 0.1-μm GaAs pHEMT Technology

This paper describes a wideband Q-band low noise amplifier (LNA) using the 0.1-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology. The LNA is implemented with a 4-stage self-biased common-source (CS) topology. A measured amplifier achieves a peak power gain of 28 dB, with a 3-dB bandwidth of 15 GHz centered at 43 GHz. The amplifier exhibits an output 1 dB gain compression point of 9.6 dBm. The on-wafer measured noise figure stays under 2.8 dB over the 3-dB bandwidth. An LNA module is designed and fabricated based on the chip. To the best of the authors' knowledge, the LNA exhibits one of the lowest noise figure among other reported wideband Q-band LNA using the same technology.

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来源期刊

2019 12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT)

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