面向2nm及以上节点的高性能、可靠的Ge通道器件

2020 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2020-12-12 DOI:10.1109/IEDM13553.2020.9372007

H. Arimura, E. Capogreco, A. Vohra, C. Porret, R. Loo, E. Rosseel, A. Hikavyy, D. Cott, G. Boccardi, L. Witters, G. Eneman, J. Mitard, N. Collaert, N. Horiguchi

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引用次数: 5

摘要

本文介绍了近年来高迁移率ge沟道n/ pfet的研究进展。栅极堆、结和触点是Ge n/ pfet的关键元件。通过对这些单元模块的改进，提高了Ge FinFET和栅极全能(GAA)纳米线(NW) pfet的电学性能和可靠性。将讨论实现高性能和可靠的Ge n/ pfet的剩余技术挑战。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Toward high-performance and reliable Ge channel devices for 2 nm node and beyond

This paper describes our recent research progress on high-mobility Ge-channel n/pFETs. Gate stack, junction and contact are the key challenging components of Ge n/pFETs. Through the improvement of those unit modules, the electrical performance and reliability of Ge FinFET and gate-all-around (GAA) nanowire (NW) pFETs have been improved. Remaining technical challenges for the realization of high performance and reliable Ge n/pFETs will be discussed.

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2020 IEEE International Electron Devices Meeting (IEDM)

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