一款0.1 mm2 3通道面积优化ΣΔ ADC,采用0.16µm CMOS, BW为20 khz, DR为86 db

F. Sebastiano, R. V. Veldhoven
{"title":"一款0.1 mm2 3通道面积优化ΣΔ ADC,采用0.16µm CMOS, BW为20 khz, DR为86 db","authors":"F. Sebastiano, R. V. Veldhoven","doi":"10.1109/ESSCIRC.2013.6649151","DOIUrl":null,"url":null,"abstract":"Front-ends for automotive sensors must digitize multiple channels with high resolution while minimizing their silicon area to save costs. Both channel latency and inter-channel gain mismatch must be minimized to be able to serve multiple sensor applications, ranging from ABS to power steering, with the same front-end. The proposed ΣΔ ADC simultaneously digitizes 3 channels, each with a DR of 86 dB over a 20-kHz BW using a 75-MHz clock. Channel latency is <;40 ns and inter-channel gain mismatch is <;0.2%. The ADC occupies only 0.1 mm2 in a 0.16-μm CMOS process. The small area is enabled by channel multiplexing, allowing component sharing among the channels, and by the large oversampling ratio (OSR), allowing for smaller capacitors.","PeriodicalId":183620,"journal":{"name":"2013 Proceedings of the ESSCIRC (ESSCIRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A 0.1-mm2 3-channel area-optimized ΣΔ ADC in 0.16-µm CMOS with 20-kHz BW and 86-dB DR\",\"authors\":\"F. Sebastiano, R. V. Veldhoven\",\"doi\":\"10.1109/ESSCIRC.2013.6649151\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Front-ends for automotive sensors must digitize multiple channels with high resolution while minimizing their silicon area to save costs. Both channel latency and inter-channel gain mismatch must be minimized to be able to serve multiple sensor applications, ranging from ABS to power steering, with the same front-end. The proposed ΣΔ ADC simultaneously digitizes 3 channels, each with a DR of 86 dB over a 20-kHz BW using a 75-MHz clock. Channel latency is <;40 ns and inter-channel gain mismatch is <;0.2%. The ADC occupies only 0.1 mm2 in a 0.16-μm CMOS process. The small area is enabled by channel multiplexing, allowing component sharing among the channels, and by the large oversampling ratio (OSR), allowing for smaller capacitors.\",\"PeriodicalId\":183620,\"journal\":{\"name\":\"2013 Proceedings of the ESSCIRC (ESSCIRC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Proceedings of the ESSCIRC (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2013.6649151\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2013.6649151","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

摘要

汽车传感器的前端必须以高分辨率数字化多通道,同时尽量减少其硅面积以节省成本。信道延迟和信道间增益失配必须最小化,以便能够使用相同的前端服务于从ABS到动力转向的多个传感器应用。所提出的ΣΔ ADC同时数字化3个通道,每个通道使用75 mhz时钟,在20 khz BW上具有86 dB的DR。通道延迟< 40ns,通道间增益失配< 0.2%。ADC采用0.16 μm CMOS工艺,占地面积仅为0.1 mm2。小面积是通过通道多路复用实现的,允许在通道之间共享组件,并通过大过采样比(OSR)实现,允许更小的电容器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.1-mm2 3-channel area-optimized ΣΔ ADC in 0.16-µm CMOS with 20-kHz BW and 86-dB DR
Front-ends for automotive sensors must digitize multiple channels with high resolution while minimizing their silicon area to save costs. Both channel latency and inter-channel gain mismatch must be minimized to be able to serve multiple sensor applications, ranging from ABS to power steering, with the same front-end. The proposed ΣΔ ADC simultaneously digitizes 3 channels, each with a DR of 86 dB over a 20-kHz BW using a 75-MHz clock. Channel latency is <;40 ns and inter-channel gain mismatch is <;0.2%. The ADC occupies only 0.1 mm2 in a 0.16-μm CMOS process. The small area is enabled by channel multiplexing, allowing component sharing among the channels, and by the large oversampling ratio (OSR), allowing for smaller capacitors.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信