对最新系统LSI中老化加速和有效筛选程序的考虑

N. Wakai, Y. Kobira, H. Egawa
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引用次数: 3

摘要

本文讨论了采用90nm和65nm工艺的最新系统大规模集成电路(Large Scale Integration, LSI)的老化加速系数的有效测定方法。良率、缺陷密度和可靠性之间的关系是众所周知的,并且对于缺陷机制有很好的记录。特别重要的是,确定合适的温度和电压加速因子,以估计筛选这些缺陷所需的确切老化条件。本文的方法被发现对从缺陷角度难以控制的最近的cu过程是有用的。在130 nm至65 nm工艺的测试车辆上进行了评估,得到了以下加速因子:Ea>0.9 ev和gamma(gamma)>-5.85。此外,还确定了缺陷密度越低,威布尔形状参数越低。失效分析发现,这些工艺的主要失效是由颗粒引起的,其威布尔形状参数ldquo随缺陷密度的变化而变化。这些因素可以应用于工艺和产品具有由缺陷主导的失效机制的不成熟时期。因此,从缺陷密度的角度来看,有效的Burn-In是可能的,即使是在技术不成熟的时期。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Consideration of Burn-In acceleration and effective screening procedure in latest System LSI
An effective procedure to determine the burn-in acceleration factors for latest system LSI (Large Scale Integration) with 90 nm and 65 nm technology are discussed in this paper. The relationship among yield, defect density, and reliability, is well known and well documented for defect mechanisms. In particular, it is important to determine the suitable acceleration factors for temperature and voltage to estimate the exact burn-in conditions needed to screen these defects. The approach in this paper is found to be useful for recent Cu-processes which are difficult to control from a defectivity standpoint. Performing an evaluation with test vehicles of from 130 nm to 65 nm technology, the following acceleration factors were obtained, Ea>0.9 ev and gamma(Gamma)>-5.85. In addition, it was determined that a lower defect density gave a lower Weibull shape parameter. As a result of failure analysis, it is found that the main failures in these technologies were caused by particles, and their Weibull shape parameter ldquobetardquo was changed depending of the related defect density. These factors can be applied for an immature time period where the process and products have failure mechanisms dominated by defects. Thus, an effective Burn-In is possible with classification from the standpoint of defect density, even from a period of technology immaturity.
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