用于无线高数据速率通信的e波段高功率放大器的设计

2009 Canadian Conference on Electrical and Computer Engineering Pub Date : 2009-05-03 DOI:10.1109/CCECE.2009.5090093

S. Asadi, M. Yagoub

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引用次数: 2

摘要

本文采用90 nm CMOS技术，实现了增益为17 dB、饱和输出功率为11.5 dBm、带宽为5 GHz的全集成e波段功率放大器。放大器配置由两个级联编码级和一个共源输出级组成。它显示了20%的峰值功率增加效率，而从1.5 V电源消耗50兆瓦。

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Design of an E-band high power amplifier for wireless high data rate communications

In this paper, a fully integrated E-band power amplifier with 17 dB gain, 11.5 dBm saturated output power, and 5 GHz bandwidth was achieved in the 90 nm CMOS technology. The amplifier configuration consists of two cascode stages and a common-source output stage. It exhibits a peak power added-efficiency of 20 % while consuming 50 mW from a 1.5 V power supply.

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2009 Canadian Conference on Electrical and Computer Engineering

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