M. Tomáška, Tibor Lalinský, G. Vanko, Martin Misun
{"title":"2μm栅长AlGaN/GaN HEMT结构的微波表征与性能","authors":"M. Tomáška, Tibor Lalinský, G. Vanko, Martin Misun","doi":"10.1109/COMITE.2008.4569952","DOIUrl":null,"url":null,"abstract":"The paper reports the properties of AlGaN/GaN HEMT fabricated on sapphire substrate. Using 2 mum length of gate electrode 6.67 GHz transition frequency as well as 24.5 GHz maximum frequency of oscillation was achieved. Small-signal model was identified. The transistor transconductance is in the range of 170 mS/mm. However the transistor was intended for structure and technology verification, it could be used in RF circuits. To improve HEMT's microwave properties, gate length and source-drain distance shortening are in progress.","PeriodicalId":306289,"journal":{"name":"2008 14th Conference on Microwave Techniques","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2008-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microwave Characterization and Properties of 2μm Gate Length AlGaN/GaN HEMT Structures\",\"authors\":\"M. Tomáška, Tibor Lalinský, G. Vanko, Martin Misun\",\"doi\":\"10.1109/COMITE.2008.4569952\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper reports the properties of AlGaN/GaN HEMT fabricated on sapphire substrate. Using 2 mum length of gate electrode 6.67 GHz transition frequency as well as 24.5 GHz maximum frequency of oscillation was achieved. Small-signal model was identified. The transistor transconductance is in the range of 170 mS/mm. However the transistor was intended for structure and technology verification, it could be used in RF circuits. To improve HEMT's microwave properties, gate length and source-drain distance shortening are in progress.\",\"PeriodicalId\":306289,\"journal\":{\"name\":\"2008 14th Conference on Microwave Techniques\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 14th Conference on Microwave Techniques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMITE.2008.4569952\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 14th Conference on Microwave Techniques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMITE.2008.4569952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microwave Characterization and Properties of 2μm Gate Length AlGaN/GaN HEMT Structures
The paper reports the properties of AlGaN/GaN HEMT fabricated on sapphire substrate. Using 2 mum length of gate electrode 6.67 GHz transition frequency as well as 24.5 GHz maximum frequency of oscillation was achieved. Small-signal model was identified. The transistor transconductance is in the range of 170 mS/mm. However the transistor was intended for structure and technology verification, it could be used in RF circuits. To improve HEMT's microwave properties, gate length and source-drain distance shortening are in progress.