电流泵送和电压拉取以最大速度:在350nm标准CMOS工艺中2.5 Gsps闪存ADC的应用

B. Sivakumar, S. Thirunakkarasu
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引用次数: 0

摘要

随着工艺技术的小型化速度放缓,系统设计更多地依赖于创新,而不是技术来突破现有系统的速度极限。寄生电容在信号穿过电路的路径中占主导地位,其运行速度在很大程度上取决于这些寄生的减少以及这些寄生的充电或放电速度。本文提出了这一机制的一种创新。展示了两种创新技术,电流泵送和电压牵引,并提供了它们在Flash模数转换器(ADC)的采样和保持、前置放大器和锁存元件中的应用;结果表明,在0.35 um CMOS技术中,工作频率可以被推到初始频率的两倍,达到2.5 Gsps。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Current Pumping and Voltage Pulling to Maximize Speed: An Application to a 2.5 Gsps Flash ADC in 350 nm Standard CMOS Process
As process technologies slow down in their miniaturization, system design relies more heavily on innovation rather than technology to push the limits of speed beyond that of the existing systems. Parasitic capacitances dominate the paths in which the signals traverse through the circuit and the speed of operation largely depends on the reduction of these parasitics and on how fast these parasitics could be charged or discharged. This paper presents an innovation in this regime. Two innovative techniques, current pumping and voltage pulling are shown and their application to the sample and hold, pre-amplifier and latch components of a Flash Analog-to-Digital converter (ADC) is provided; It is shown that the frequency of operation can be pushed to double the initial, to 2.5 Gsps in 0.35 um CMOS technology.
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