带温度补偿的带隙参考电路

2010 International Conference on Anti-Counterfeiting, Security and Identification Pub Date : 2010-07-18 DOI:10.1109/ICASID.2010.5551833

Shuai Wang, J. Xing

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引用次数: 4

摘要

提出了一种基于电流与绝对温度成比例的二阶补偿带隙基准。该BGR利用PTAT电流提高基极-发射极电压VBE的温度系数，优化了BGR的温度特性。基于nee2um BiCMOS工艺库的仿真表明，在3V ~ 10V的供电范围内，BGR的TC较低(仅为9.07 ppm/°C)，输出电压变化小于3.7mV。

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A bandgap reference circuit with temperature compensation

A second-order compensated bandgap reference (BGR) using current proportional to absolute temperature (PTAT) is proposed in this paper. This proposed BGR utilize a PTAT current to improve the temperature coefficient (TC) of base-emitter voltage VBE, and make temperature characteristic of the BGR optimized. The simulation based on nee 2um BiCMOS process library shows a lower TC (only 9.07 ppm/°C) and a variation in the output voltage of the BGR less than 3.7mV with a power supply range from 3V to 10V.

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2010 International Conference on Anti-Counterfeiting, Security and Identification

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