双damascene Cu/SiO/sub - 2/互连的焦耳加热辅助电迁移失效机制

Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003 Pub Date : 2003-07-07 DOI:10.1109/IPFA.2003.1222741

C.W. Chang, C. L. Gan, C. Thompson, K. Pey, W. Choi, M. H. Chua

{"title":"双damascene Cu/SiO/sub - 2/互连的焦耳加热辅助电迁移失效机制","authors":"C.W. Chang, C. L. Gan, C. Thompson, K. Pey, W. Choi, M. H. Chua","doi":"10.1109/IPFA.2003.1222741","DOIUrl":null,"url":null,"abstract":"Failure mechanisms observed in electromigration (EM)-stressed dual damascene Cu/SiO/sub 2/ interconnect trees were studied by stressing at fixed conditions for a short time followed by stressing with increasing current to induce Joule heating. Similar failure sites as those observed in samples stressed at normal EM conditions were found. This suggests that Joule heating can be used to accelerate some EM failure mechanisms that occur in normal EM experiments. Finite element method (FEM) simulation showed that the failure mechanisms could be due to Joule heating of Ta diffusion barrier after fully-spanning void was formed. The probabilistic existence of the post-stress 'volcano craters' and melt patches is highly dependent on the void growth mechanism during EM stressing.","PeriodicalId":266326,"journal":{"name":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Joule heating-assisted electromigration failure mechanisms for dual damascene Cu/SiO/sub 2/ interconnects\",\"authors\":\"C.W. Chang, C. L. Gan, C. Thompson, K. Pey, W. Choi, M. H. Chua\",\"doi\":\"10.1109/IPFA.2003.1222741\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Failure mechanisms observed in electromigration (EM)-stressed dual damascene Cu/SiO/sub 2/ interconnect trees were studied by stressing at fixed conditions for a short time followed by stressing with increasing current to induce Joule heating. Similar failure sites as those observed in samples stressed at normal EM conditions were found. This suggests that Joule heating can be used to accelerate some EM failure mechanisms that occur in normal EM experiments. Finite element method (FEM) simulation showed that the failure mechanisms could be due to Joule heating of Ta diffusion barrier after fully-spanning void was formed. The probabilistic existence of the post-stress 'volcano craters' and melt patches is highly dependent on the void growth mechanism during EM stressing.\",\"PeriodicalId\":266326,\"journal\":{\"name\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2003.1222741\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2003.1222741","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

研究了电迁移(EM)应力双damascene Cu/SiO/sub 2/互连树的破坏机制，方法是在固定条件下进行短时间应力，然后增加电流以诱导焦耳加热。发现了与在正常电磁条件下应力试样中观察到的相似的失效点。这表明焦耳加热可以用来加速正常电磁实验中出现的一些电磁失效机制。有限元模拟结果表明，其失效机制可能是由于Ta扩散势垒在完全跨越空隙形成后的焦耳加热。应力后“火山口”和熔体斑块的存在概率高度依赖于电磁应力作用下孔隙的生长机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Joule heating-assisted electromigration failure mechanisms for dual damascene Cu/SiO/sub 2/ interconnects

Failure mechanisms observed in electromigration (EM)-stressed dual damascene Cu/SiO/sub 2/ interconnect trees were studied by stressing at fixed conditions for a short time followed by stressing with increasing current to induce Joule heating. Similar failure sites as those observed in samples stressed at normal EM conditions were found. This suggests that Joule heating can be used to accelerate some EM failure mechanisms that occur in normal EM experiments. Finite element method (FEM) simulation showed that the failure mechanisms could be due to Joule heating of Ta diffusion barrier after fully-spanning void was formed. The probabilistic existence of the post-stress 'volcano craters' and melt patches is highly dependent on the void growth mechanism during EM stressing.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003

自引率

0.00%

发文量