STO上沉积PZT薄膜电性能的光学调谐

International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2015-11-06 DOI:10.1117/12.2199851

Reema Gupta, M. Tomar, Vinay Gupta

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引用次数: 3

摘要

本文研究了PZT薄膜光电探测器(PD)电性能的光学调谐。利用脉冲激光沉积技术在外延匹配的钛酸锶衬底上制备了钛酸铅锆(PZT)薄膜。在PZT薄膜上绘制了精细的铝数字间电极，研究了PD的响应。通过调整入射激光束的光学特性，研究了光响应。根据入射激光的强度和样品与激光的距离，对响应进行了修正。此外，基于PZT的光电探测器对入射光光学性质的微小变化非常敏感。PZT薄膜的固有特性，包括其铁电特性，使其成为一种新型的紫外光电探测器材料。PZT光电探测器与波长365nm的紫外激光距离为10cm时的响应约为152。响应时间和恢复时间分别为60毫秒，这是快得多的紫外线检测相比，其他光电探测器。此外，制备的PZT基光电探测器在重复紫外传感上也观察到稳定的响应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optical tuning of electrical properties of PZT thin film deposited on STO

Present report deals with the optical tuning of electrical properties of PZT thin film based photodetector (PD). Lead Zirconium Titanate (PZT) thin film has been fabricated over epitaxially matched Strontium Titanate (STO) substrate using Pulsed Laser Deposition technique. Fine aluminium inter digital electrodes were patterned over PZT film to study the response of the PD. The photo response has been investigated by tuning the optical properties of the incident laser beam. The response was found to be modified according to the incident laser intensity and the distance between sample and laser. Moreover, PZT based photo detector was found to be highly sensitive towards small variation in the optical properties of the incident light. The intrinsic properties of the PZT thin film including its ferroelectric properties make it a novel material for the fabrication of UV based photo detector. The response of the PZT based Photodetector was found to be about 152 at a distance of 10cm between the PD and the UV laser of wavelength 365nm. The response time and recovery time were found to be 60 msec each which are much faster for UV detection as compared to other photodetectors. Moreover, a stable response was also observed on the repetitive UV sensing for the fabricated PZT based Photodetector.

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International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors

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