基于多层石墨烯纳米带的互连性能分析

M. Kaur, N. Gupta, A. Singh
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引用次数: 5

摘要

多层石墨烯纳米带(MLGNR)由于其简单的制备工艺和与碳纳米管相当的性能,正在成为未来芯片互连的重要材料。本文分析了基于等效单导体(ESC)模型的MLGNR互连在13.4和21 nm技术节点上的局部/中间和全局级芯片互连的性能。首先分析了导电通道数随费米能量和互连宽度的变化规律。采用等效单导体(ESC)模型计算了金属扶手椅(AC)和z形(ZZ)型MLGNR互连的延迟、平均功耗和功率延迟积(PDP)的性能。将金属扶手椅和锯齿形MLGNR的计算结果与铜基互连进行了比较。与铜基互连相比,mlgnr提供了显著改善的延迟比、平均功耗降低和更低的PDP值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance Analysis of Multilayer Graphene Nanoribbon Based Interconnects
Multilayer Graphene nanoribbon (MLGNR) are emerging as prominent future material for chip interconnects owing to their simple fabrication process and equivalent performance to CNTs. This paper presents performance analysis of MLGNR based interconnects on equivalent single-conductor (ESC) model for local/intermediate and global level of chip interconnects at 13.4 and 21 nm technology nodes. The number of conducting channel variations with Fermi energy and interconnect width are analyzed first. The performance of metallic armchair (AC) and Zig-Zag (ZZ) based MLGNR interconnects is computed employing equivalent single conductor (ESC) model in terms of delay, average power consumption, and power-delay product (PDP). The computed results for metallic armchair and Zig-Zag MLGNR are compared against Copper based interconnects. It is observed that MLGNRs offer significantly improved delay ratio, average power reduction, and lower PDP values than copper based interconnects.
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