一种带时域量化器的0.4V 2.02fJ/转换步长10位混合SAR ADC

Yan-Jiun Chen, C. Hsieh
{"title":"一种带时域量化器的0.4V 2.02fJ/转换步长10位混合SAR ADC","authors":"Yan-Jiun Chen, C. Hsieh","doi":"10.1109/VLSIC.2014.6858372","DOIUrl":null,"url":null,"abstract":"This paper presents an ultra-low voltage and power efficient 10-bit hybrid successive-approximation register (SAR) analog-to-digital converter (ADC). To reduce the total amount of capacitance and relieve requirement of comparator, we propose a hybrid architecture composed of coarse and fine conversions by 7-bit SAR ADC and 3.5-bit time-domain quantizer, respectively. Using residue voltages generated by coarse ADC and converting it to time-domain, the fine ADC detects the least three bits with 0.5-bit redundancy by Vernier delay structure. At 250KS/s and Nyquist rate input, the ADC prototype fabricated in 90nm CMOS consumes 200nW at 0.4V supply. It achieves a SNDR of 53.7db and a resulting FoM of 2.02-fJ/conv.-step.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"A 0.4V 2.02fJ/conversion-step 10-bit hybrid SAR ADC with time-domain quantizer in 90nm CMOS\",\"authors\":\"Yan-Jiun Chen, C. Hsieh\",\"doi\":\"10.1109/VLSIC.2014.6858372\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an ultra-low voltage and power efficient 10-bit hybrid successive-approximation register (SAR) analog-to-digital converter (ADC). To reduce the total amount of capacitance and relieve requirement of comparator, we propose a hybrid architecture composed of coarse and fine conversions by 7-bit SAR ADC and 3.5-bit time-domain quantizer, respectively. Using residue voltages generated by coarse ADC and converting it to time-domain, the fine ADC detects the least three bits with 0.5-bit redundancy by Vernier delay structure. At 250KS/s and Nyquist rate input, the ADC prototype fabricated in 90nm CMOS consumes 200nW at 0.4V supply. It achieves a SNDR of 53.7db and a resulting FoM of 2.02-fJ/conv.-step.\",\"PeriodicalId\":381216,\"journal\":{\"name\":\"2014 Symposium on VLSI Circuits Digest of Technical Papers\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Symposium on VLSI Circuits Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2014.6858372\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Symposium on VLSI Circuits Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2014.6858372","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26

摘要

提出了一种超低电压、低功耗的10位混合连续逼近寄存器(SAR)模数转换器(ADC)。为了减少电容总量,减轻对比较器的要求,我们提出了一种由7位SAR ADC和3.5位时域量化器分别组成的粗转换和精转换混合架构。精细ADC利用粗ADC产生的剩余电压,将其转换为时域,通过游标延迟结构检测出至少3位,冗余为0.5位。在250KS/s和奈奎斯特速率输入下,用90nm CMOS制作的ADC原型在0.4V电源下消耗200nW。SNDR为53.7db, FoM为2.02 fj /con . step。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.4V 2.02fJ/conversion-step 10-bit hybrid SAR ADC with time-domain quantizer in 90nm CMOS
This paper presents an ultra-low voltage and power efficient 10-bit hybrid successive-approximation register (SAR) analog-to-digital converter (ADC). To reduce the total amount of capacitance and relieve requirement of comparator, we propose a hybrid architecture composed of coarse and fine conversions by 7-bit SAR ADC and 3.5-bit time-domain quantizer, respectively. Using residue voltages generated by coarse ADC and converting it to time-domain, the fine ADC detects the least three bits with 0.5-bit redundancy by Vernier delay structure. At 250KS/s and Nyquist rate input, the ADC prototype fabricated in 90nm CMOS consumes 200nW at 0.4V supply. It achieves a SNDR of 53.7db and a resulting FoM of 2.02-fJ/conv.-step.
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