T. Saito, Y. Ueno, T. Yabu, A. Kurosawa, S. Nagai, T. Yanagida, T. Hori, Y. Kawasuji, T. Abe, T. Kodama, H. Nakarai, T. Yamazaki, H. Mizoguchi
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We have been developing a laser produced plasma extremely ultra violet (LPP-EUV) light source for a high volume manufacturing (HVM) semiconductor lithography. It has several unique technologies such as the high power short pulse carbon dioxide (CO2) laser, the short wavelength solid-state pre-pulse laser and the debris mitigation technology with the magnetic field. This paper presents the key technologies for a high power LPP-EUV light source. We also show the latest performance data which is 188W EUV power at intermediate focus (IF) point with 3.7% conversion efficiency (CE) at 100 kHz.
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