Stanislav Scheier, Dominik Deelmann, S. Frei, C. Widemann, W. Mathis
{"title":"过电压保护元件建模的时频结合表征方法","authors":"Stanislav Scheier, Dominik Deelmann, S. Frei, C. Widemann, W. Mathis","doi":"10.1109/ISEMC.2015.7256368","DOIUrl":null,"url":null,"abstract":"Nonlinear voltage sensitive protection elements, e.g. Multi-Layer Varistor (MLV) or Transient Voltage Suppressor (TVS) are useful to protect IC pins from ESD on System Level. Such elements might exhibit a significant voltage overshoot for fast transients. This work describes a combined time and frequency domain characterization method and its application to an MLV. Impedance measurements with VNA at different DC-bias points are used for model identification and parameterization. The static nonlinear IV-behavior of nonlinear model part at higher voltages and currents is extrapolated with a TLP IV-curve. The model is successfully validated with ESD pulses in time domain. The transient behavior including the occurring voltage overshoot can be reproduced with high accuracy.","PeriodicalId":412708,"journal":{"name":"2015 IEEE International Symposium on Electromagnetic Compatibility (EMC)","volume":"304 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A combined time and frequency domain characterization method for modeling of overvoltage protection elements\",\"authors\":\"Stanislav Scheier, Dominik Deelmann, S. Frei, C. Widemann, W. Mathis\",\"doi\":\"10.1109/ISEMC.2015.7256368\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nonlinear voltage sensitive protection elements, e.g. Multi-Layer Varistor (MLV) or Transient Voltage Suppressor (TVS) are useful to protect IC pins from ESD on System Level. Such elements might exhibit a significant voltage overshoot for fast transients. This work describes a combined time and frequency domain characterization method and its application to an MLV. Impedance measurements with VNA at different DC-bias points are used for model identification and parameterization. The static nonlinear IV-behavior of nonlinear model part at higher voltages and currents is extrapolated with a TLP IV-curve. The model is successfully validated with ESD pulses in time domain. The transient behavior including the occurring voltage overshoot can be reproduced with high accuracy.\",\"PeriodicalId\":412708,\"journal\":{\"name\":\"2015 IEEE International Symposium on Electromagnetic Compatibility (EMC)\",\"volume\":\"304 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-09-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Symposium on Electromagnetic Compatibility (EMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEMC.2015.7256368\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Symposium on Electromagnetic Compatibility (EMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEMC.2015.7256368","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A combined time and frequency domain characterization method for modeling of overvoltage protection elements
Nonlinear voltage sensitive protection elements, e.g. Multi-Layer Varistor (MLV) or Transient Voltage Suppressor (TVS) are useful to protect IC pins from ESD on System Level. Such elements might exhibit a significant voltage overshoot for fast transients. This work describes a combined time and frequency domain characterization method and its application to an MLV. Impedance measurements with VNA at different DC-bias points are used for model identification and parameterization. The static nonlinear IV-behavior of nonlinear model part at higher voltages and currents is extrapolated with a TLP IV-curve. The model is successfully validated with ESD pulses in time domain. The transient behavior including the occurring voltage overshoot can be reproduced with high accuracy.