利用绝缘体上的铌酸锂器件生成确定性 N 光子态

Hua-Ying Liu, Ming-Chi Shang, Xiaoyi Liu, Ying Wei, Minghao Mi, Lijian Zhang, Y. Gong, Zhenda Xie, Shirong Zhu
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引用次数: 2

摘要

摘要大光子数量子态是量子信息实际应用中一个基本但尚未解决的要求。我们提出了一种可行且可扩展的 N 光子态生成方案,该方案使用铌酸锂绝缘体电路。这种方案的基础是集成一个名为光子数量倍增单元(PDU)的通用构件,用于确定性单光子参数下变频和上变频。PDU 依赖于 107 光品质因数谐振器和毫瓦级片上功率,这在目前的制造和实验限制范围内。以群集态和格林伯格-霍恩-蔡林格态为例,展示了针对不同量子任务的 N 光子态生成方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deterministic N-photon state generation using lithium niobate on insulator device
Abstract. The large-photon-number quantum state is a fundamental but nonresolved request for practical quantum information applications. We propose an N-photon state generation scheme that is feasible and scalable, using lithium niobate on insulator circuits. Such a scheme is based on the integration of a common building block called photon-number doubling unit (PDU) for deterministic single-photon parametric downconversion and upconversion. The PDU relies on a 107-optical-quality-factor resonator and mW-level on-chip power, which is within the current fabrication and experimental limits. N-photon state generation schemes, with cluster and Greenberger–Horne–Zeilinger state as examples, are shown for different quantum tasks.
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