Alq3 QW-OLED光电参数的设计、仿真与优化

Shaimaa Gamal, I. Talkhan, Tawfik Ismail
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引用次数: 0

摘要

虽然发光二极管(LED)是在20世纪被发现的,但它现在被广泛应用于照明,屏幕和各种其他室内和室外应用。有机发光二极管(OLED)是LED技术的前沿分支之一。在Alq3 oled的结构中,采用了TPD(空穴输运层)和Alq3(电子输运层)等高能效光学材料。有机发光层位于两个电触点之间。阳极由氧化铟锡(ITO)制成,阴极由铝锂(Al/Li)制成。本文采用通用光伏器件模型- gpvdm仿真,对应用量子阱(QW)前后的Alq3有机发光二极管(OLED)进行了建模和仿真。在OLED上施加了-2.24 V的反向电压。得到了光输出电流密度、光通量和电流的变化曲线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design, Simulation & Optimization on Electrical and Optical Parameters of Alq3 QW-OLED
Although the light-emitting diode (LED) was discovered in the 1900s, it is now widely used in lighting, screens, and a variety of other indoor and outdoor applications. (Organic Light Emitting Diode) OLED is one of the advancing branches of LED technology. In the structure of Alq3 OLEDs, highlight-efficiency optical materials such as TPD (hole transport layer) and Alq3 (electron transport layer) have been used. Organic light emitting layers are between two electrical contacts. The anode was made of indium tin oxide (ITO), and the cathode was made of aluminiumlithium (Al/Li). This article reports the modelling and simulation of the Alq3 organic light-emitting diode (OLED) before and after applying quantum well (QW) using the general-purpose photovoltaic device model-GPVDM simulation. A reverse voltage of -2.24 V has been applied to the OLED. Light output current density variance curves have been obtained, as have the light flux and the current.
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