PVD ZnO缓冲层对溶胶-凝胶ZnO薄膜结晶度和光学性能的改善

Shu-Yi Liu, Tao Chen, Yu-Long Jiang, G. Ru, Bingzong Li, X. Qu
{"title":"PVD ZnO缓冲层对溶胶-凝胶ZnO薄膜结晶度和光学性能的改善","authors":"Shu-Yi Liu, Tao Chen, Yu-Long Jiang, G. Ru, Bingzong Li, X. Qu","doi":"10.1109/ICSICT.2008.4734638","DOIUrl":null,"url":null,"abstract":"The effect of the ZnO homo-buffer layer on the structural, optical and electrical properties of the Sol-gel ZnO films was systematically investigated. The XRD and SEM results show that the homo-buffer layer can improve the degree of the preferential c-axis orientation (the best Lotering orientation factor (F) can reach 0.915), the grain size and the surface morphology of thereon ZnO films. A narrower UV emission at 380 nm was observed with weaker deep-level visible emission for the ZnO films with a homo-buffer layer using room-temperature (RT) photoluminescence (PL) spectra. The electrical results show that the carrier concentration of the films with buffer layer is decreased and the Hall mobility is increased, indicating that a ZnO homo-buffer layer can effectively improve the crystallinity of the films and improve both electrical and optical properties.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Improvement of the crystallinity and optical properties of sol-gel ZnO thin film by a PVD ZnO buffer layer\",\"authors\":\"Shu-Yi Liu, Tao Chen, Yu-Long Jiang, G. Ru, Bingzong Li, X. Qu\",\"doi\":\"10.1109/ICSICT.2008.4734638\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of the ZnO homo-buffer layer on the structural, optical and electrical properties of the Sol-gel ZnO films was systematically investigated. The XRD and SEM results show that the homo-buffer layer can improve the degree of the preferential c-axis orientation (the best Lotering orientation factor (F) can reach 0.915), the grain size and the surface morphology of thereon ZnO films. A narrower UV emission at 380 nm was observed with weaker deep-level visible emission for the ZnO films with a homo-buffer layer using room-temperature (RT) photoluminescence (PL) spectra. The electrical results show that the carrier concentration of the films with buffer layer is decreased and the Hall mobility is increased, indicating that a ZnO homo-buffer layer can effectively improve the crystallinity of the films and improve both electrical and optical properties.\",\"PeriodicalId\":436457,\"journal\":{\"name\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2008.4734638\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734638","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

系统地研究了ZnO均匀缓冲层对ZnO溶胶-凝胶膜结构、光学和电学性能的影响。XRD和SEM结果表明,均质缓冲层可以改善ZnO薄膜的c轴优先取向程度(最佳Lotering取向因子F达到0.915),改善ZnO薄膜的晶粒尺寸和表面形貌。在室温(RT)光致发光(PL)光谱中,发现具有均匀缓冲层的ZnO薄膜在380 nm处有较窄的紫外发射和较弱的深能级可见发射。电学结果表明,有缓冲层的薄膜载流子浓度降低,霍尔迁移率提高,表明ZnO同质缓冲层可以有效改善薄膜的结晶度,提高薄膜的电学和光学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improvement of the crystallinity and optical properties of sol-gel ZnO thin film by a PVD ZnO buffer layer
The effect of the ZnO homo-buffer layer on the structural, optical and electrical properties of the Sol-gel ZnO films was systematically investigated. The XRD and SEM results show that the homo-buffer layer can improve the degree of the preferential c-axis orientation (the best Lotering orientation factor (F) can reach 0.915), the grain size and the surface morphology of thereon ZnO films. A narrower UV emission at 380 nm was observed with weaker deep-level visible emission for the ZnO films with a homo-buffer layer using room-temperature (RT) photoluminescence (PL) spectra. The electrical results show that the carrier concentration of the films with buffer layer is decreased and the Hall mobility is increased, indicating that a ZnO homo-buffer layer can effectively improve the crystallinity of the films and improve both electrical and optical properties.
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