辐照掺锗光纤的光激发发光

2013 IEEE 4th International Conference on Photonics (ICP) Pub Date : 2013-12-19 DOI:10.1109/ICP.2013.6687060

D. Bradley, A. Z. Aziz, A. Knapton, H. Abdul-Rashid, A. K. M. Mizanur Rahman, Y. M. Amin, R. Nor, M. J. Maah, R. Mahat

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引用次数: 3

摘要

据报道，掺锗光纤在暴露于辐射源后会发光。本文报道了锗掺杂SiO2纤维在长时间暴露于~20 Gy的β粒子后的光激发发光(OSL)。由于OSL，透射光的波长发生了变化，从827±34 nm到917±15 nm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optically Stimulated Luminescence in beta irradiated Ge-doped optical fibre

Ge-doped optical fiber has been reported to luminate following exposures to radiation sources. We report in this paper Optically Stimulated Luminescence (OSL) of Ge-doped SiO2 fibres following prolonged exposure to beta particles, giving a dose of ~20 Gy. A shift in the wavelength of transmitted light has been observed, due to OSL from 827 ± 34 nm to 917 ± 15 nm.

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2013 IEEE 4th International Conference on Photonics (ICP)

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