{"title":"可调谐x波段sigehbt单级级联码LNA","authors":"M. Doğan, I. Tekin","doi":"10.1109/MMW.2010.5605144","DOIUrl":null,"url":null,"abstract":"This pape r pre sents an X-band silic on-germanium (SiGe) single stage cascode tunable low-noise amplifier (LNA) for active phased arra y transm it/receive m odules. LNA is implemented by using IHP SiGe he terojunction bipolar transistors (HBTs) 0.25-μm SGB25V technology. Cadence is used in c ollaboration with ADS during sc hematic and lay out de sign and the r esults de pict that de signed LNA dissipates 15.36 mW from an 2. 4 V DC power supply and the maximum gain aroun d 18 dB in X-band while not exceeding the 2.4 dB noise figure (NF). Reverse gain of the LNA is very low (<−40 dB). Input terminal is matched so that S11 is below −10 dB in X-band.","PeriodicalId":145274,"journal":{"name":"2010 10th Mediterranean Microwave Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A tunable X-band SiGe HBT single stage cascode LNA\",\"authors\":\"M. Doğan, I. Tekin\",\"doi\":\"10.1109/MMW.2010.5605144\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This pape r pre sents an X-band silic on-germanium (SiGe) single stage cascode tunable low-noise amplifier (LNA) for active phased arra y transm it/receive m odules. LNA is implemented by using IHP SiGe he terojunction bipolar transistors (HBTs) 0.25-μm SGB25V technology. Cadence is used in c ollaboration with ADS during sc hematic and lay out de sign and the r esults de pict that de signed LNA dissipates 15.36 mW from an 2. 4 V DC power supply and the maximum gain aroun d 18 dB in X-band while not exceeding the 2.4 dB noise figure (NF). Reverse gain of the LNA is very low (<−40 dB). Input terminal is matched so that S11 is below −10 dB in X-band.\",\"PeriodicalId\":145274,\"journal\":{\"name\":\"2010 10th Mediterranean Microwave Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 10th Mediterranean Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MMW.2010.5605144\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 10th Mediterranean Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MMW.2010.5605144","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A tunable X-band SiGe HBT single stage cascode LNA
This pape r pre sents an X-band silic on-germanium (SiGe) single stage cascode tunable low-noise amplifier (LNA) for active phased arra y transm it/receive m odules. LNA is implemented by using IHP SiGe he terojunction bipolar transistors (HBTs) 0.25-μm SGB25V technology. Cadence is used in c ollaboration with ADS during sc hematic and lay out de sign and the r esults de pict that de signed LNA dissipates 15.36 mW from an 2. 4 V DC power supply and the maximum gain aroun d 18 dB in X-band while not exceeding the 2.4 dB noise figure (NF). Reverse gain of the LNA is very low (<−40 dB). Input terminal is matched so that S11 is below −10 dB in X-band.
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