改进了高电流密度下先进双极晶体管传输时间和多余相位延迟的建模

Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257) Pub Date : 2001-08-14 DOI:10.1109/MWSCAS.2001.986319

Seonghearn Lee

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引用次数: 1

摘要

利用基于z参数方程的精确测量技术，提取了高电流密度下前向传输时间和多余相位延迟的偏置相关数据。利用这些数据，开发了这些参数的简单表达式，以改进射频大信号双极晶体管模型，并通过与测量数据的良好一致性验证了它们的准确性。

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Improved modeling for transit time and excess phase delay of advanced bipolar transistors at high current densities

Bias-dependent data of the forward transit time and excess phase delay at high current densities are extracted using an accurate measurement technique based on Z-parameter equations. Using these data, simple expressions of these parameters have been developed to improve a RF large-signal bipolar transistor model, and their accuracy is verified by showing good agreements with measured data.

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Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257)

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