氮化镓高电子迁移率晶体管的直流，交流和击穿模拟与少层石墨烯热去除系统

2022 International Conference on Advanced Technologies for Communications (ATC) Pub Date : 2022-10-20 DOI:10.1109/ATC55345.2022.9943047

Dao Dinh Ha, V. Volcheck, V. Stempitsky, Tran Tuan Trung

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引用次数: 0

摘要

模拟了氮化镓高电子迁移率晶体管的直流、小信号交流和击穿特性。分析了栅极与石墨烯除热元件之间的距离对器件性能的影响。仿真结果表明，向栅极方向延伸石墨烯层不会影响直流特性，但会大大提高交流性能。从另一方面看，栅极和石墨烯层之间的距离越近，电场越大，击穿电压也就越低。

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DC, AC and Breakdown Simulation of the Gallium Nitride High Electron Mobility Transistor with a Few-Layer Graphene Heat-Removal System

The DC, small-signal AC and breakdown characteristics of the GaN high electron mobility transistor with a few-layer graphene heat-removal system were simulated. The effect of the distance between the gate and the graphene heat-removal element on the device behavior was analyzed. The simulations reveal that extending the graphene layers towards the gate does not influence the DC characteristics but enhances greatly the AC performance quantities. From the other side, a close proximity between the gate and the graphene layers leads to a higher electric field and, consequently, to a reduced breakdown voltage.

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2022 International Conference on Advanced Technologies for Communications (ATC)

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