电泵浦GeSn/SiGeSn微环激光器，最小阈值电流为40 mA

2023 IEEE Silicon Photonics Conference (SiPhotonics) Pub Date : 2023-04-01 DOI:10.1109/SiPhotonics55903.2023.10141949

Teren Liu, L. Seidel, B. Marzban, M. Oehme, J. Witzens, G. Capellini, D. Grützmacher, Dan Buca

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引用次数: 0

摘要

介绍了采用标准CMOS技术制备的电泵浦GeSn微环激光器的特性。从阈值和光发射强度等激光性能的角度对具有较大几何设计参数的微环腔进行了比较。

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Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA

The characterization of electrically pumped GeSn micro-ring lasers fabricated using standard CMOS technology is presented. Micro-rings cavities with a large set of geometric design parameters are compared from the point of view of laser performance like threshold and optical emission intensity.

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2023 IEEE Silicon Photonics Conference (SiPhotonics)

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