S. Maeda, You-Seung Jin, J. Choi, S. Oh, Hyun-Woo Lee, Jae-yoon Yoo, Min-Chul Sun, J. Ku, K. Lee, Su-gon Bae, S. Kang, Jeong-Hwan Yang, Young-Wug Kim, K. Suh
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Impact of mechanical stress engineering on flicker noise characteristics
Relationship between mechanical stress engineering and flicker noise are clarified for the first time using a 50nm level CMOS technology. It is found that enhanced mechanical stress degrades flicker noise characteristics. Trap states and dipoles generated by the stress are considered to be the cause of degradation. The transistor performance enhancement with flicker noise reduction by nitrogen profile optimization in gate dielectric is demonstrated as a countermeasure.
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