高导热性和高可靠性下填料

Y. Abe, K. Yamada, N. Abe, F. Tanaka, T. Fujiki
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引用次数: 5

摘要

许多制造商都在研究倒装芯片封装的小型化问题。下填料的导热系数一直被认为是重要的。常规底填料中含有二氧化硅作为填料。含硅填料的下填料导热系数约为0.4W/mK。高导热下填料的导热系数要求大于1w /mK。然而,当选择二氧化硅作为填料时,由于二氧化硅的导热系数约为1.3 W/mK,因此很难确定导热系数是否大于1W/mK。对不同种类的氮化铝进行了研究。高导热下填料已被开发。采用细粒度氮化铝填充,具有高导热性和良好的流动性。通过控制氮化铝填料的掺量,实现了2W/mK以上的导热系数。同时满足JEDEC 3级预处理试验、温度循环试验等下充填料的基本要求
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High thermally conductive and high reliability under-fill
The miniaturization of flip-chip package is examined in many manufacturers. A thermal conductivity of underfill material has been regarded as important. Silica is contained in conventional under-fill as filler. Thermal conductivity of under-fill which contains silica filler is around 0.4W/mK. More than 1 W/mK of thermal conductivity is required for high thermally conductive under-fill. However, it is difficult to confirm if thermal conductivities are more than 1W/mK when silica is chosen as filler, since thermal conductivity of silica is about 1.3 W/mK. The various kinds of aluminum nitride were examined. High thermally conductive under-fill has been developed. It is filled with fine particle size aluminum nitride which will provide high thermal conductivity and good fluidity. And this under-fill realized over 2W/mK of thermal conductivity by control of loading level of the aluminum nitride filler. Also, this product satisfies the basic requirements for the under-fill, such as the JEDEC level 3 preconditioning test and temperature cycle test
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