半导体制造中特征轮廓欠定系统的先进过程控制

K. Hui, Leo Ke, S. Sheen
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引用次数: 1

摘要

半导体制造中先进过程控制的典型解决方案侧重于消除某些器件特性的过程结果的目标偏移。通常,过程模型是方形的和全秩的,因此能够对控制输入的调整作出独特的决定。随着半导体器件的复杂性从平面结构向三维结构发展,简单的目标偏移量的基本控制已不再足够,目标和均匀性的同时控制已变得至关重要。对于后者,它可以指在整个晶圆表面上相同器件特征的变化的晶圆内均匀性;也可以指同一地点不同地物的原位剖面。在任何一种情况下,由于控制输入的数量是有限的,并且少于所有控制输出的可能数量,它们都会导致很大程度上的欠确定系统。半导体制造中的传统APC解决方案无法处理这些情况。本文提出了一种利用多元最优控制技术来达到预期性能的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced Process Controls of Underdetermined Systems of Feature Profiles in Semiconductor Manufacturing
Typical solutions of Advanced Process Controls in semiconductor manufacturing are focused on the eliminations of target offsets for the process results of some device features. Normally the process models are square and of full ranks, thus enabling unique determinations of the adjustments of control inputs. As complexity of semiconductor devices evolves from planar to 3D structures, elementary controls of simple target offsets are no longer sufficient as concurrent controls of both target and uniformity have become essential. For the latter it may refer to within-wafer uniformity for variations of the same device feature over the entire wafer surface; or it may refer to the in-situ profiles of different features at the same spot. In either case, they result in largely underdetermined systems as the number of control inputs is finite and fewer than the possible number of all control outputs. Conventional APC solutions in semiconductor manufacturing are incapable of handling these situations. This paper presents an approach using multivariate optimal control techniques to achieve the desired performances.
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