基于f类DCO的12mW全数字锁相环,用于28nm CMOS的4G手机

F. Kuo, H. Chen, K. Yen, Hsien-Yuan Liao, C. Jou, F. Hsueh, M. Babaie, R. Staszewski
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引用次数: 30

摘要

我们提出了一种用于先进蜂窝无线电的全数字锁相环(ADPLL)的新架构,该架构针对28纳米CMOS进行了优化。它基于宽调谐范围,高分辨率的f类DCO,只有可切换的金属电容器和相位预测TDC。8mW DCO在~2 GHz的20MHz偏置下发射-157 dBc/Hz,同时完全满足金属密度规则。时钟频率为40MHz的0.4mW TDC在-108 dBc/Hz带内相位噪声下实现pvt稳定的6 ps分辨率。FREF杂散超低在<;-94 dBc。ADPLL支持2点调制,功耗为12mW,占用面积为0.22mm2,因此与之前的记录相比,功耗降低72%,面积减少38%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 12mW all-digital PLL based on class-F DCO for 4G phones in 28nm CMOS
We propose a new architecture of an all-digital PLL (ADPLL) for advanced cellular radios that is optimized for 28 nm CMOS. It is based on a wide tuning range, fine-resolution class-F DCO with only switchable metal capacitors and a phase-predictive TDC. The 8mW DCO emits -157 dBc/Hz at 20MHz offset at ~2 GHz, while fully satisfying metal density rules. The 0.4mW TDC clocked at 40MHz achieves PVT-stabilized 6 ps resolution for -108 dBc/Hz in-band phase noise. FREF spur is ultra-low at <;-94 dBc. The ADPLL supports a 2-point modulation and consumes 12mW while occupying 0.22mm2, thus demonstrating both 72% power and 38% area reductions over prior records.
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