F. Kuo, H. Chen, K. Yen, Hsien-Yuan Liao, C. Jou, F. Hsueh, M. Babaie, R. Staszewski
{"title":"基于f类DCO的12mW全数字锁相环,用于28nm CMOS的4G手机","authors":"F. Kuo, H. Chen, K. Yen, Hsien-Yuan Liao, C. Jou, F. Hsueh, M. Babaie, R. Staszewski","doi":"10.1109/VLSIC.2014.6858393","DOIUrl":null,"url":null,"abstract":"We propose a new architecture of an all-digital PLL (ADPLL) for advanced cellular radios that is optimized for 28 nm CMOS. It is based on a wide tuning range, fine-resolution class-F DCO with only switchable metal capacitors and a phase-predictive TDC. The 8mW DCO emits -157 dBc/Hz at 20MHz offset at ~2 GHz, while fully satisfying metal density rules. The 0.4mW TDC clocked at 40MHz achieves PVT-stabilized 6 ps resolution for -108 dBc/Hz in-band phase noise. FREF spur is ultra-low at <;-94 dBc. The ADPLL supports a 2-point modulation and consumes 12mW while occupying 0.22mm2, thus demonstrating both 72% power and 38% area reductions over prior records.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"273-276 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":"{\"title\":\"A 12mW all-digital PLL based on class-F DCO for 4G phones in 28nm CMOS\",\"authors\":\"F. Kuo, H. Chen, K. Yen, Hsien-Yuan Liao, C. Jou, F. Hsueh, M. Babaie, R. Staszewski\",\"doi\":\"10.1109/VLSIC.2014.6858393\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a new architecture of an all-digital PLL (ADPLL) for advanced cellular radios that is optimized for 28 nm CMOS. It is based on a wide tuning range, fine-resolution class-F DCO with only switchable metal capacitors and a phase-predictive TDC. The 8mW DCO emits -157 dBc/Hz at 20MHz offset at ~2 GHz, while fully satisfying metal density rules. The 0.4mW TDC clocked at 40MHz achieves PVT-stabilized 6 ps resolution for -108 dBc/Hz in-band phase noise. FREF spur is ultra-low at <;-94 dBc. The ADPLL supports a 2-point modulation and consumes 12mW while occupying 0.22mm2, thus demonstrating both 72% power and 38% area reductions over prior records.\",\"PeriodicalId\":381216,\"journal\":{\"name\":\"2014 Symposium on VLSI Circuits Digest of Technical Papers\",\"volume\":\"273-276 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"30\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Symposium on VLSI Circuits Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2014.6858393\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Symposium on VLSI Circuits Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2014.6858393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 12mW all-digital PLL based on class-F DCO for 4G phones in 28nm CMOS
We propose a new architecture of an all-digital PLL (ADPLL) for advanced cellular radios that is optimized for 28 nm CMOS. It is based on a wide tuning range, fine-resolution class-F DCO with only switchable metal capacitors and a phase-predictive TDC. The 8mW DCO emits -157 dBc/Hz at 20MHz offset at ~2 GHz, while fully satisfying metal density rules. The 0.4mW TDC clocked at 40MHz achieves PVT-stabilized 6 ps resolution for -108 dBc/Hz in-band phase noise. FREF spur is ultra-low at <;-94 dBc. The ADPLL supports a 2-point modulation and consumes 12mW while occupying 0.22mm2, thus demonstrating both 72% power and 38% area reductions over prior records.