用SR刻蚀法制备短毫米波ptfe基e平面波导耦合器

M. Kishihara, M. Murakami, A. Yamaguchi, Y. Utsumi, I. Ohta
{"title":"用SR刻蚀法制备短毫米波ptfe基e平面波导耦合器","authors":"M. Kishihara, M. Murakami, A. Yamaguchi, Y. Utsumi, I. Ohta","doi":"10.1109/RFIT.2015.7377909","DOIUrl":null,"url":null,"abstract":"It has been reported that the SR (synchrotron radiation) etching process is useful to construct PTFE-based microstructures. This paper treats a trial fabrication of the PTFE-based E-plane waveguide coupler for short millimeter-wave based on the SR etching process of PTFE, with the aim of developing integrated waveguide circuits. First, a cavity-type 3-dB directional coupler is designed at 180 GHz. In this paper, an integrated PTFE pattern, in which the two 3-dB couplers and the matching section are cascaded, is fabricated. Then, the frequency characteristics of the PTFE-based E-plane waveguide coupler are measured, and the validity of the fabrication process is verified.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Trial fabrication of PTFE-based E-plane waveguide coupler for short millimeter-wave by SR etching\",\"authors\":\"M. Kishihara, M. Murakami, A. Yamaguchi, Y. Utsumi, I. Ohta\",\"doi\":\"10.1109/RFIT.2015.7377909\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It has been reported that the SR (synchrotron radiation) etching process is useful to construct PTFE-based microstructures. This paper treats a trial fabrication of the PTFE-based E-plane waveguide coupler for short millimeter-wave based on the SR etching process of PTFE, with the aim of developing integrated waveguide circuits. First, a cavity-type 3-dB directional coupler is designed at 180 GHz. In this paper, an integrated PTFE pattern, in which the two 3-dB couplers and the matching section are cascaded, is fabricated. Then, the frequency characteristics of the PTFE-based E-plane waveguide coupler are measured, and the validity of the fabrication process is verified.\",\"PeriodicalId\":422369,\"journal\":{\"name\":\"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2015.7377909\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2015.7377909","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

已有报道称,同步辐射刻蚀工艺可用于构建ptfe基微结构。本文以开发集成波导电路为目的,基于聚四氟乙烯的SR刻蚀工艺,尝试制作了一种基于聚四氟乙烯的短毫米波e平面波导耦合器。首先,设计了一个180 GHz的腔型3db定向耦合器。本文制作了一个集成的聚四氟乙烯模式,其中两个3db耦合器和匹配部分级联。然后,测量了基于ptfe的e平面波导耦合器的频率特性,验证了制作工艺的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Trial fabrication of PTFE-based E-plane waveguide coupler for short millimeter-wave by SR etching
It has been reported that the SR (synchrotron radiation) etching process is useful to construct PTFE-based microstructures. This paper treats a trial fabrication of the PTFE-based E-plane waveguide coupler for short millimeter-wave based on the SR etching process of PTFE, with the aim of developing integrated waveguide circuits. First, a cavity-type 3-dB directional coupler is designed at 180 GHz. In this paper, an integrated PTFE pattern, in which the two 3-dB couplers and the matching section are cascaded, is fabricated. Then, the frequency characteristics of the PTFE-based E-plane waveguide coupler are measured, and the validity of the fabrication process is verified.
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