整流天线器件用AlGaAs/GaAs HEMT结构肖特基二极管的建模与表征

2008 Second Asia International Conference on Modelling & Simulation (AMS) Pub Date : 2008-05-13 DOI:10.1109/AMS.2008.187

N. Parimon, Siti Suhaila Bte Mohd Yusof, A. M. Hashim

{"title":"整流天线器件用AlGaAs/GaAs HEMT结构肖特基二极管的建模与表征","authors":"N. Parimon, Siti Suhaila Bte Mohd Yusof, A. M. Hashim","doi":"10.1109/AMS.2008.187","DOIUrl":null,"url":null,"abstract":"The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT structure was carried out. From the simulated results, it was found that the operating frequency of the Schottky diode is tunable based on the length of coplanar waveguide.","PeriodicalId":122964,"journal":{"name":"2008 Second Asia International Conference on Modelling & Simulation (AMS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Modeling and Characterization of Schottky Diode on AlGaAs/GaAs HEMT Structure for Rectenna Device\",\"authors\":\"N. Parimon, Siti Suhaila Bte Mohd Yusof, A. M. Hashim\",\"doi\":\"10.1109/AMS.2008.187\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT structure was carried out. From the simulated results, it was found that the operating frequency of the Schottky diode is tunable based on the length of coplanar waveguide.\",\"PeriodicalId\":122964,\"journal\":{\"name\":\"2008 Second Asia International Conference on Modelling & Simulation (AMS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 Second Asia International Conference on Modelling & Simulation (AMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AMS.2008.187\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Second Asia International Conference on Modelling & Simulation (AMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AMS.2008.187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

介绍了用于整流天线器件的AlGaAs/GaAs HEMT结构肖特基二极管的建模和表征。整流天线装置可以用作无线电源，它可以捕获微波功率并转换为直流电，以产生芯片上的其他设备或电路。在AlGaAs/GaAs HEMT结构上进行肖特基二极管的设计与仿真。仿真结果表明，肖特基二极管的工作频率可以根据共面波导的长度进行调节。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Modeling and Characterization of Schottky Diode on AlGaAs/GaAs HEMT Structure for Rectenna Device

The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT structure was carried out. From the simulated results, it was found that the operating frequency of the Schottky diode is tunable based on the length of coplanar waveguide.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2008 Second Asia International Conference on Modelling & Simulation (AMS)

自引率

0.00%

发文量