所有MOS晶体管带隙参考采用斩波稳定化技术

2010 International SoC Design Conference Pub Date : 2010-11-01 DOI:10.1109/SOCDC.2010.5682897

H. Roh, J. Roh, Q. Z. D. Duanquanzhen

{"title":"所有MOS晶体管带隙参考采用斩波稳定化技术","authors":"H. Roh, J. Roh, Q. Z. D. Duanquanzhen","doi":"10.1109/SOCDC.2010.5682897","DOIUrl":null,"url":null,"abstract":"A 0.6-V, 8-μW bandgap reference without BJTs is realized in the standard CMOS 0.13μm technology. All MOS transistors bandgap reference circuit with very low supply voltage 0.6V is designed. The chopper stabilization technique is used to improve the accuracy of the bandgap reference voltage. The measurement results have confirmed that the chopper stabilization technique reduces bandgap voltage error from 100mV to 30mV comparing to the one without chopper stabilization technique.","PeriodicalId":380183,"journal":{"name":"2010 International SoC Design Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"All MOS transistors bandgap reference using chopper stabilization technique\",\"authors\":\"H. Roh, J. Roh, Q. Z. D. Duanquanzhen\",\"doi\":\"10.1109/SOCDC.2010.5682897\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 0.6-V, 8-μW bandgap reference without BJTs is realized in the standard CMOS 0.13μm technology. All MOS transistors bandgap reference circuit with very low supply voltage 0.6V is designed. The chopper stabilization technique is used to improve the accuracy of the bandgap reference voltage. The measurement results have confirmed that the chopper stabilization technique reduces bandgap voltage error from 100mV to 30mV comparing to the one without chopper stabilization technique.\",\"PeriodicalId\":380183,\"journal\":{\"name\":\"2010 International SoC Design Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International SoC Design Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCDC.2010.5682897\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International SoC Design Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCDC.2010.5682897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

采用标准CMOS 0.13μm工艺，实现了无bjt的0.6 v、8 μ w带隙基准电路。设计了全MOS晶体管带隙参考电路，电源电压极低，为0.6V。采用斩波稳定技术提高了带隙参考电压的精度。测量结果证实，与不采用斩波稳定技术相比，采用斩波稳定技术后带隙电压误差从100mV减小到30mV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

All MOS transistors bandgap reference using chopper stabilization technique

A 0.6-V, 8-μW bandgap reference without BJTs is realized in the standard CMOS 0.13μm technology. All MOS transistors bandgap reference circuit with very low supply voltage 0.6V is designed. The chopper stabilization technique is used to improve the accuracy of the bandgap reference voltage. The measurement results have confirmed that the chopper stabilization technique reduces bandgap voltage error from 100mV to 30mV comparing to the one without chopper stabilization technique.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 International SoC Design Conference

自引率

0.00%

发文量