Investigation on solution-processed In-Si-O thin-film transistor via spin-coating method

In this work, we have explored optimum fabrication condition by a solution processing method for 3 at.% Si-doped indium oxide thin-film transistors (TFTs). In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction (XRD) techniques, and the operation of TFTs was characterized by a conventional three-probe method. XRR results suggested that as the annealing temperature increased, the film thickness decreased. In addition, according to XRD measurement, the ISO film started crystalline from 850°C regardless the film thickness. The best ISO TFT showed the value of VT of-5 V, µ of1.32 cm2/Vs, SS of1 V/dec, and on/off current ratio about 107.