磁近场探头与微带线的电磁耦合电路模型

J. Raoult, Pierre Payet, R. Omarouayache, L. Chusseau
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引用次数: 8

摘要

电磁(EM)注入实验需要准确定量地了解有效耦合到目标线路或电路的电压,以便预测数字IC电路对EM威胁的破坏行为或灵敏度。为了回答这个问题,我们在这里导出了磁探头与微带线耦合的完整定量模型。该模型的新颖之处在于通过类比变压器来考虑耦合,然后推导出相应的互感作为探头与目标相对位置的函数。它的输入是耦合到50Ω微带线的实际探头的s参数测量值,其输出是可以在任何电路模拟器中实现的等效电路。该模型的有效性扩展到GHz频率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electromagnetic coupling circuit model of a magnetic near-field probe to a microstrip line
Electromagnetic (EM) injection experiments require an accurate and quantitative knowledge of the voltage effectively coupled to a target line or circuit in order to predict disruptive behavior or sensitivity of digital IC circuits to EM threats. To answer this question we derive here a complete quantitative model of the coupling of our magnetic probe to a microstrip line. The novelty of this model is to consider the coupling by analogy with a transformer and then to deduce the corresponding mutual inductance as a function of probe to target relative positions. Its inputs are S-parameter measurements of the actual probe coupled to a 50Ω microstrip line and its output is an electric equivalent circuit that can be implemented in any circuit simulator. Validity of the model extends up to GHz frequencies.
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