150 GHz HEMT大信号模型的开发方法

Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI:10.1109/INMMC.1994.512518

C. Diskus, C. Bergamaschi, M. Schefer, W. Patrick, B. Klepser, W. Baechtold

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引用次数: 0

摘要

本文将讨论描述InAlAs/InGaAs/InP-HEMT电学行为的大信号模型的发展。所讨论的晶体管是在我们实验室制造的。他们发现了150 GHz的传输频率，据我们所知，这是0.25 /spl mu/m足迹的t栅极获得的最佳结果。该项目的目的是开发这种晶体管的模型，用于用HP-MDS或Spice等商业模拟器软件模拟非线性电路。该方法得到了一个易于应用的模型，该模型与测量的s参数拟合得很好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Approach for developing a large signal model of a 150 GHz HEMT

In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result obtained with a T-gate of 0.25 /spl mu/m footprint. The aim of this project was to develop a model of this transistor for simulating nonlinear circuits with commercial simulator software like HP-MDS or Spice. The procedure results in an easily applicable model which produces very good fits to the measured S-parameters.

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Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits

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