基于梯度隙InGaP/ InP As的宽带Gunn二极管

2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS) Pub Date : 2018-09-01 DOI:10.1109/UWBUSIS.2018.8520161

I. Storozhenko, M. Kaydash, O. Yaroshenko, Y. Arkusha

{"title":"基于梯度隙InGaP/ InP As的宽带Gunn二极管","authors":"I. Storozhenko, M. Kaydash, O. Yaroshenko, Y. Arkusha","doi":"10.1109/UWBUSIS.2018.8520161","DOIUrl":null,"url":null,"abstract":"The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InGaP/lnPAs graded-gap semiconductor compounds at different Ga and As distributions. The active region of the diode is 2.5 µm with an ionized impurity concentration of 1016 cm−3. It is paper shown that the output power and the efficiency of Gunn generators increase several times when the InGaP/lnPAs graded-gap semiconductors are used. The reasons for this increase are considered. The highest power of 11.3 kW/cm2 with efficiency of 10.2% at frequency of 40 GHz belong to In<inf>0.4</inf>Ga<inf>0.6</inf>P/lnP<inf>0.4</inf>As<inf>0.6</inf>diode.","PeriodicalId":167305,"journal":{"name":"2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Wide-Band Gunn Diodes Based on Graded-Gap InGaP/ InP As\",\"authors\":\"I. Storozhenko, M. Kaydash, O. Yaroshenko, Y. Arkusha\",\"doi\":\"10.1109/UWBUSIS.2018.8520161\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InGaP/lnPAs graded-gap semiconductor compounds at different Ga and As distributions. The active region of the diode is 2.5 µm with an ionized impurity concentration of 1016 cm−3. It is paper shown that the output power and the efficiency of Gunn generators increase several times when the InGaP/lnPAs graded-gap semiconductors are used. The reasons for this increase are considered. The highest power of 11.3 kW/cm2 with efficiency of 10.2% at frequency of 40 GHz belong to In<inf>0.4</inf>Ga<inf>0.6</inf>P/lnP<inf>0.4</inf>As<inf>0.6</inf>diode.\",\"PeriodicalId\":167305,\"journal\":{\"name\":\"2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/UWBUSIS.2018.8520161\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UWBUSIS.2018.8520161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了不同Ga和As分布的InGaP/lnPAs梯度隙半导体化合物的n+-n-n+转移电子器件产生振荡的数值实验结果。二极管的有源区为2.5µm，电离杂质浓度为1016 cm−3。研究表明，当使用InGaP/lnPAs梯度隙半导体时，Gunn发生器的输出功率和效率提高了数倍。对这一增长的原因进行了考虑。在40ghz频率下，In0.4Ga0.6P/ lnp0.4 as0.6二极管的最高功率为11.3 kW/cm2，效率为10.2%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Wide-Band Gunn Diodes Based on Graded-Gap InGaP/ InP As

The paper presents the results of numerical experiments on the oscillation generation using the n⁺-n-n⁺ transfer electron device based on InGaP/lnPAs graded-gap semiconductor compounds at different Ga and As distributions. The active region of the diode is 2.5 µm with an ionized impurity concentration of 10¹⁶ cm⁻³. It is paper shown that the output power and the efficiency of Gunn generators increase several times when the InGaP/lnPAs graded-gap semiconductors are used. The reasons for this increase are considered. The highest power of 11.3 kW/cm² with efficiency of 10.2% at frequency of 40 GHz belong to In0.4Ga0.6P/lnP0.4As0.6diode.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS)

自引率

0.00%

发文量