On the Research of Non Reciprocal Fin-Line Devices

In this paper, a semiconductor based fin-line isolator is analyzed. This device is based on field displacement effect phenomenon arising in a gyroelectric semiconductor (a theoretical method is presented). It is mainly an extension of the well known spectral domain approach. For this purpose, the semiconductor layer is taken into account through its conductivity tensor. Two semiconductors (GaAs and InSb) have been considered. The main parameters of the isolator such as isolation, insertion losses, band width are computed and compared with the experimental results. There is satisfactory agreement between theoretical and experimental results in the case of the GaAs. Finally it is pointed out that the InSb is the best choice.