{"title":"多层Co/Ni结构电流传感器的特性与设计","authors":"A. Pernía, J. Lopera, M. Prieto, F.N.S. Ollero","doi":"10.1109/APEC.1998.647723","DOIUrl":null,"url":null,"abstract":"Recent studies show the possibility of using amorphous materials as current sensors. In this paper, the magnetoresistance effect existing in multilayer (Co/sub 50/Ni/sub 25/)/sub 10/ structures has been used to develop a current sensor susceptible to be fully integrated. Experimental results have been obtained to compare the properties of the anisotropic magnetoresistance effect (AMR) with commercial ones.","PeriodicalId":156715,"journal":{"name":"APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Characteristics and design of a current sensor using multilayer Co/Ni structures\",\"authors\":\"A. Pernía, J. Lopera, M. Prieto, F.N.S. Ollero\",\"doi\":\"10.1109/APEC.1998.647723\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent studies show the possibility of using amorphous materials as current sensors. In this paper, the magnetoresistance effect existing in multilayer (Co/sub 50/Ni/sub 25/)/sub 10/ structures has been used to develop a current sensor susceptible to be fully integrated. Experimental results have been obtained to compare the properties of the anisotropic magnetoresistance effect (AMR) with commercial ones.\",\"PeriodicalId\":156715,\"journal\":{\"name\":\"APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-02-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC.1998.647723\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"APEC '98 Thirteenth Annual Applied Power Electronics Conference and Exposition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.1998.647723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characteristics and design of a current sensor using multilayer Co/Ni structures
Recent studies show the possibility of using amorphous materials as current sensors. In this paper, the magnetoresistance effect existing in multilayer (Co/sub 50/Ni/sub 25/)/sub 10/ structures has been used to develop a current sensor susceptible to be fully integrated. Experimental results have been obtained to compare the properties of the anisotropic magnetoresistance effect (AMR) with commercial ones.