多层Co/Ni结构电流传感器的特性与设计

A. Pernía, J. Lopera, M. Prieto, F.N.S. Ollero
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引用次数: 5

摘要

最近的研究显示了使用非晶材料作为电流传感器的可能性。本文利用多层(Co/sub 50/Ni/sub 25/)/sub 10/结构中存在的磁阻效应,开发了一种易于完全集成的电流传感器。实验结果表明,各向异性磁阻效应(AMR)的特性与商业效应的特性进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characteristics and design of a current sensor using multilayer Co/Ni structures
Recent studies show the possibility of using amorphous materials as current sensors. In this paper, the magnetoresistance effect existing in multilayer (Co/sub 50/Ni/sub 25/)/sub 10/ structures has been used to develop a current sensor susceptible to be fully integrated. Experimental results have been obtained to compare the properties of the anisotropic magnetoresistance effect (AMR) with commercial ones.
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