泄漏反馈技术分析

R. Lorenzo, S. Chaudhury
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引用次数: 3

摘要

漏电功耗已成为电路设计人员非常关注的问题。预计在未来的VLSI电路中,泄漏功率将主导总功耗。在此,我们提出了一种新的设计,称为“NMOS泄漏反馈”,它在保留精确逻辑状态的同时减少了泄漏电流。该电路技术包括在上拉和下拉路径中添加NMOS辅助晶体管,以在不影响电路其他参数的情况下减少漏电流。利用32nm Berkeley预测技术模型对逆变链进行仿真,NMOS漏电反馈方法在适当的W/L比下实现了比漏电反馈方法更小的面积、功耗和延迟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of leakage feedback technique
Leakage power consumption has become serious concern for circuit designers. It is expected that leakage power will dominate the total power dissipation in future VLSI circuits. We here propose a new design named “NMOS leakage feedback” which reduces leakage current while saving exact logic state. The circuit technique includes addition of NMOS helper transistors to both pull-up and pull-down paths in order to reduce leakage current without affecting the other parameters of the circuit. Based on simulation with inverter chain using 32nm Berkeley predictive technology model, NMOS leakage feedback approach achieves less area, power and delay over leakage feedback approaches with proper W/L ratio.
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