金刚石包覆Si FEAs的发射特性

9th International Vacuum Microelectronics Conference Pub Date : 1996-07-07 DOI:10.1109/IVMC.1996.601824

V. Zhirnov, E. I. Givargizov, A. V. Kandidov, B. V. Seleznev, A.N. Alimova

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引用次数: 4

摘要

在脉冲和直流模式下测试了金刚石涂层的大面积Si尖端阵列(10/sup 3/-10/sup 6/尖端阵列)。该阵列具有均匀发射、可重现I-V图和低发射阈值等特点。在脉冲模式下，金刚石涂层硅阵列获得的最大电流为80毫安。发射特性优于未涂覆的Si尖端阵列或涂覆金刚石的平面阴极。

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Emission characterization of diamond coated Si FEAs

Large-area arrays of Si tips (10/sup 3/-10/sup 6/ tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with diamond coated Si arrays was 80 mA in pulse mode. Emission characteristics were found to be superior to the uncoated Si tip arrays or diamond-coated flat cathodes.

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9th International Vacuum Microelectronics Conference

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