GaN FinFET的建模技术

2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT) Pub Date : 2021-09-13 DOI:10.1109/ucmmt53364.2021.9569911

Haiyan Lu, Kai Zhang, Tangsheng Chen, Jixin Chen

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引用次数: 0

摘要

本文简要介绍了氮化镓FinFET器件的制备及其直流和微波特性。GaN FinFET具有较好的线性度、较高的电流密度和功率密度。本文提出了一种用于GaN finfet的大信号等效电路建模方法。文中给出了改进后的Rs和电流方程。将直流和S参数模型的仿真结果与实测值进行了比较。结果表明，该模型精度高，收敛性好，可用于电路设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling Techniques for GaN FinFET

This paper briefly introduces the fabrication of GaN FinFET devices and its DC and microwave characteristics. GaN FinFET exhibits better linearity, higher current density and power density. A large signal equivalent circuit modeling for GaN FinFETs is presented in this paper. The improved Rs and current equation are shown in the paper. The simulation results of DC and S parameter models are compared with the measured ones. The results show that the model has high precision and good convergence and can be used in circuit design.

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来源期刊

2021 14th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)

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