{"title":"采用电流复用技术和单偏置电压实现的全集成、高线性度超宽带LNA","authors":"Chin-Lung Yang, Wei-Lin Hsieh, Y. Chiang","doi":"10.1109/ECWT.2007.4403954","DOIUrl":null,"url":null,"abstract":"A fully integrated ultra-wideband (UWB) low-noise amplifier (LNA) operating in the 7.2-9.1 GHz frequency range is presented. The LNA is constructed in self-biased and current-reused configuration to eliminate the external supply voltage applied in gate to decrease the complexity of bias circuitry. A shunt-shunt feedback network is not only used to archive self-biased architecture and neutralize the miller effect, but also increase the linearity and bandwidth of the amplifier. A prototype was designed and fabricated in a TSMC 0.18-mum technology to demonstrate the proposed LNA circuit. The measurements of the prototype show the performances in the design band about 10 dB power gain, 3.9 dB noise figure, 2-dBm input-referred third-order intercept point (IIP3) and drawing 9 mA from a 1.8 V power supply.","PeriodicalId":448587,"journal":{"name":"2007 European Conference on Wireless Technologies","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A Fully Integrated and High Linearity UWB LNA Implemented with Current-Reused Technique and Using Single-Biasing Voltage\",\"authors\":\"Chin-Lung Yang, Wei-Lin Hsieh, Y. Chiang\",\"doi\":\"10.1109/ECWT.2007.4403954\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated ultra-wideband (UWB) low-noise amplifier (LNA) operating in the 7.2-9.1 GHz frequency range is presented. The LNA is constructed in self-biased and current-reused configuration to eliminate the external supply voltage applied in gate to decrease the complexity of bias circuitry. A shunt-shunt feedback network is not only used to archive self-biased architecture and neutralize the miller effect, but also increase the linearity and bandwidth of the amplifier. A prototype was designed and fabricated in a TSMC 0.18-mum technology to demonstrate the proposed LNA circuit. The measurements of the prototype show the performances in the design band about 10 dB power gain, 3.9 dB noise figure, 2-dBm input-referred third-order intercept point (IIP3) and drawing 9 mA from a 1.8 V power supply.\",\"PeriodicalId\":448587,\"journal\":{\"name\":\"2007 European Conference on Wireless Technologies\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 European Conference on Wireless Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECWT.2007.4403954\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Conference on Wireless Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECWT.2007.4403954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Fully Integrated and High Linearity UWB LNA Implemented with Current-Reused Technique and Using Single-Biasing Voltage
A fully integrated ultra-wideband (UWB) low-noise amplifier (LNA) operating in the 7.2-9.1 GHz frequency range is presented. The LNA is constructed in self-biased and current-reused configuration to eliminate the external supply voltage applied in gate to decrease the complexity of bias circuitry. A shunt-shunt feedback network is not only used to archive self-biased architecture and neutralize the miller effect, but also increase the linearity and bandwidth of the amplifier. A prototype was designed and fabricated in a TSMC 0.18-mum technology to demonstrate the proposed LNA circuit. The measurements of the prototype show the performances in the design band about 10 dB power gain, 3.9 dB noise figure, 2-dBm input-referred third-order intercept point (IIP3) and drawing 9 mA from a 1.8 V power supply.
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