铜丝键合过程的有限元建模及可靠性研究

C. Yuan, E. Weltevreden, Pieter van dan Akker, R. Kregting, J. de Vreugd, G. Zhang
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引用次数: 6

摘要

铜基线键合技术被电子封装行业广泛接受,因为世界范围内的成本降低行动(与金线键合相比)。然而,铜线的力学特性与金线不同;因此,需要新的焊线工艺设置和新的焊盘结构。也指在焊丝与焊盘界面处形成新的金属间化合物(IMC)。本文将对铜线结合过程和IMC成形过程进行有限元分析,并分析在此过程中应力模式变化的原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
FE modeling of Cu wire bond process and reliability
Copper based wire bonding technology is widely accepted by electronic packaging industry due to the world-wide cost reduction actions (compared to gold wire bond). However, the mechanical characterization of copper wire differs from the gold wire; hence the new wire bond process setting and new bond pad structure is required. It also refers to the new intermetallic compound (IMC) will form at the interface of wire and bond pad. This paper will present the finite element analysis of the copper wire bond process and IMC forming and results in the stress pattern shift during the processes.
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